MBT6429DW1T1G
MBT6429DW1T1G is a NPN bipolar junction transistor for general purpose applications with a voltage rating of 45V and a current rating of 0
在庫:9,085
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部品番号 : MBT6429DW1T1G
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パッケージ/ケース : 6-TSSOP
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ブランド : onsemi
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コンポーネントの分類 : Bipolar Transistor Arrays
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日付シート : MBT6429DW1T1G データシート (PDF)
概要 MBT6429DW1T1G
The MBT6429DW1T1G product is a versatile Dual NPN Bipolar Transistor, ideal for a wide range of general purpose amplifier applications. Its compact design, housed in the SOT-363/SC-88 package, makes it perfect for low power surface mount applications where space is limited. With its excellent performance and reliability, this transistor is a trusted choice for engineers and designers looking to optimize their amplification circuits
主な特長
- SMT Assembly Capable
- RoHS Compliance Ensured
- Green Product Solution Available
- Low Power Consumption Option
- Eco-Friendly Manufacturing Process Used
- Data Security and Reliability Guarantee
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Status | Active | Transistor Type | 2 NPN (Dual) |
Current - Collector (Ic) (Max) | 200mA | Voltage - Collector Emitter Breakdown (Max) | 45V |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA | Current - Collector Cutoff (Max) | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 100µA, 5V | Power - Max | 150mW |
Frequency - Transition | 700MHz | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 | Base Product Number | MBT6429 |
Manufacturer | Diodes Incorporated | Product Category | Bipolar Transistors - BJT |
Transistor Polarity | NPN | Configuration | Dual |
Collector- Emitter Voltage VCEO Max | 45 V | Collector- Base Voltage VCBO | 55 V |
Emitter- Base Voltage VEBO | 6 V | Maximum DC Collector Current | 200 mA |
Pd - Power Dissipation | 150 mW | Gain Bandwidth Product fT | 700 MHz |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Brand | Diodes Incorporated | DC Collector/Base Gain hfe Min | 500 at 10 uA, 5 V |
Product Type | BJTs - Bipolar Transistors | Subcategory | Transistors |
Technology | Si |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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