IXSN35N100U1
IGBT Transistors rated at 35 Amps and 1000V
在庫:6,718
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- 365日の品質保証
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部品番号 : IXSN35N100U1
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パッケージ/ケース : SOT-227B-4
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Brand : IXYS
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Components Classification : IGBT Modules
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日付シート : IXSN35N100U1 データシート (PDF)
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Series : IXSN35N100
概要 IXSN35N100U1
IGBT Module Single 1000 V 38 A 205 W Chassis Mount SOT-227B
主な特長
- Silicon carbide Schottky rectifier diode
- Low reverse current leakage
- High surge current capability
- Operable in DC and AC applications
- UL recognized component for safety assurance
応用
- Compact design
- High power density
- Integrated protection
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | IGBT Transistors | RoHS | Details |
Technology | Si | Package / Case | SOT-227B-4 |
Mounting Style | SMD/SMT | Configuration | Single Dual Emitter |
Collector- Emitter Voltage VCEO Max | 1 kV | Maximum Gate Emitter Voltage | - 20 V, + 20 V |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 150 C |
Series | IXSN35N100 | Brand | IXYS |
Continuous Collector Current Ic Max | 38 A | Height | 9.6 mm |
Length | 38.3 mm | Product Type | IGBT Transistors |
Factory Pack Quantity | 10 | Subcategory | IGBTs |
Width | 25.07 mm | Unit Weight | 1.058219 oz |
保証と返品
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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