MMUN2213LT1G
Low power consumption digital transistor with leakage current of 500 nanoamps
在庫：8,406
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : MMUN2213LT1G
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パッケージ/ケース : SOT23-3
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ブランド : Onsemi
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コンポーネントの分類 : Single, Pre-Biased Bipolar Transistors
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日付シート : MMUN2213LT1G データシート (PDF)
概要 MMUN2213LT1G
Upgrade your electronics with the MMUN2213LT1G product, a state-of-the-art digital transistor series designed to enhance performance and simplify circuit design. Featuring a monolithic bias network that combines essential resistors into a single device, this innovative Bias Resistor Transistor (BRT) provides a more efficient solution for replacing individual components. By streamlining the process and reducing the need for external resistor bias networks, the MMUN2213LT1G product offers a cost-effective and space-saving alternative for electronic systems. Embrace the future of transistor technology with this cutting-edge product
主な特長
- Simplifies Circuit Design
- Reduces Board Space Requirements
- Low Power Consumption Option
- Wide Operating Temperature Range
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Status | Active | Compliance | PbAHP |
| Package Type | SOT-23-3 | Case Outline | 318-08 |
| MSL Type | 1 | MSL Temp (°C) | 260 |
| Container Type | REEL | Container Qty. | 3000 |
| ON Target | N | Polarity | NPN |
| IC Continuous (A) | 0.1 | V(BR)CEO Min (V) | 50 |
| hFE Min | 80 | R1 (kΩ) | 47 |
| R2 (kΩ) | 47 | R1/R2 Typ | 1 |
| Vi(off) Max (V) | 0.8 | Vi(on) Min (V) | 3 |
| Pricing ($/Unit) | $0.0116Sample |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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