FMMT620TA
5A current rating
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $0.352 | $0.35 |
| 10 | $0.284 | $2.84 |
| 30 | $0.255 | $7.65 |
| 100 | $0.218 | $21.80 |
| 500 | $0.202 | $101.00 |
| 1000 | $0.191 | $191.00 |
在庫：8,549
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : FMMT620TA
-
パッケージ/ケース : SOT23-3
-
Brand : Diodes Incorporated
-
Components Classification : Single Bipolar Transistors
-
日付シート : FMMT620TA データシート (PDF)
概要 FMMT620TA
The FMMT620TA transistor showcases impressive specifications that cater to the demands of modern electronics. Its ability to handle up to 1.5A of continuous collector current, coupled with a collector-emitter voltage rating of 40V, positions it as a valuable asset in amplifier and switching circuits. The SOT-23 package adds to its appeal, enabling easy assembly in compact systems without compromising on performance. Moreover, its low collector-emitter saturation voltage and base-emitter saturation voltage make it an efficient choice for power-conscious applications, striking a balance between functionality and energy efficiency
主な特長
- Highly efficient and stable operation
- Robust construction withstands shocks
- Easy to handle and mount
- Precise control ensured
応用
- Robust power amplifier modules
- Flexible base station solutions
- High-performance radar systems
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | Bipolar Transistors - BJT | RoHS | Details |
| Mounting Style | SMD/SMT | Package / Case | SOT-23-3 |
| Transistor Polarity | NPN | Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 80 V | Collector- Base Voltage VCBO | 80 V |
| Emitter- Base Voltage VEBO | 7 V | Collector-Emitter Saturation Voltage | 160 mV |
| Maximum DC Collector Current | 1.5 A | Pd - Power Dissipation | 625 mW |
| Gain Bandwidth Product fT | 160 MHz | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Series | FMMT62 |
| Brand | Diodes Incorporated | Continuous Collector Current | 1.5 A |
| Height | 1 mm | Length | 3.05 mm |
| Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 3000 |
| Subcategory | Transistors | Technology | Si |
| Width | 1.4 mm | Unit Weight | 0.000282 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
FMMT618TA
15V, 2A NPN transistor packaged in SOT23
IRFM460
500V Single N-Channel Hi-Rel MOSFET
FDFMA3N109
Trans MOSFET N-CH 30V 2.9A 6-Pin WDFN EP T/R
FMMT723TA
Transistor,2.5A,PNP,100V,SOT23 Diodes Inc FMMT723TA PNP Bipolar Transistor, 1 A, 100 V, 3-Pin SOT-23
FMMT591ATA
Product FMMT591ATA is a PNP SOT-23 bipolar transistor with a maximum voltage rating of 40V and power dissipation of 500mW at 300mA current
FMMT614TA
A 100V NPN transistor capable of handling currents up to 0
FMMT417TA
Transistor NPN 100V 0.5A SOT-23 Package
FMMT717TA
Bipolar Transistors - BJT PNP SuperSOT
AFM907NT1
N-type RF MOSFET transistor with 30V voltage rating, 16 pins, high voltage small-outline no-lead (HVSON) packaging, on tape and reel
APT64GA90LD30
APT64GA90LD30 - 900V Punch-Thru Insulated Gate Bipolar Transistor
IXTK32P60P
Field-Effect Transistor for power applications
VQ1006P
N-Channel MOSFETs 90V QUAD N-CHANNEL MOSFET
ZXM61P02FTA
SOT-23 Package P-Channel MOSFET with 20V VDS and 0.9A ID
SI9945AEY
MOSFET with a 60V voltage rating, capable of handling currents up to 3.7A, with a power dissipation of 2.4W
DTC143EUBTL
NPN Silicon Bipolar Transistor with 0.1A Collector Current and 50V Breakdown Voltage, RoHS Compliant, in UMT3F Package
2SB1260T100R
Silicon PNP Small Signal Bipolar Transistor 1A I(C) 80V V(BR)CEO 1-Element
IRF630PBF
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB
LSIC1MO170E1000
Field-Effect Transistor for High Power
IRF644NS
IRF644NS is a N-channel MOSFET designed for applications requiring up to 250 volts and 14 amps