MUN5216DW1T1G
NPN Trans Digital Bipolar Junction Transistor with 50V voltage rating
数量 | 単価(USD) | 合計金額 |
---|---|---|
10 | $0.050 | $0.50 |
100 | $0.042 | $4.20 |
300 | $0.037 | $11.10 |
3000 | $0.034 | $102.00 |
6000 | $0.032 | $192.00 |
9000 | $0.030 | $270.00 |
在庫:7,751
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : MUN5216DW1T1G
-
パッケージ/ケース : 6-TSSOP
-
Brand : onsemi
-
Components Classification : Bipolar Transistor Arrays, Pre-Biased
-
日付シート : MUN5216DW1T1G データシート (PDF)
-
Series : MUN5216DW1
概要 MUN5216DW1T1G
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Status | Active | Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA | Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7kOhms | DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA | Current - Collector Cutoff (Max) | 500nA |
Power - Max | 250mW | Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 | Supplier Device Package | SC-88/SC70-6/SOT-363 |
Base Product Number | MUN5216 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![MMUN2115LT1G](/img/package/sot23.jpg)
MMUN2115LT1G
MMUN2115LT1G: PNP Bipolar Transistors, pre-configured for biasing, ideal for applications requiring 100mA and 50V
![MMUN2216LT1G](/img/package/sot23.jpg)
MMUN2216LT1G
23, NPN, digital transistor
![MMUN2215LT1G](/img/package/sot23.jpg)
MMUN2215LT1G
NPN Bipolar Junction Transistor with Digital Characteristics
![Z0109MUF](/img/package/smb.jpg)
Z0109MUF
TRIAC 600V 8.5A 3-Pin SMB Flat T/R
![SMUN5313DW1T1G](/img/package/sc70.jpg)
SMUN5313DW1T1G
Trans Digital BJT NPN/PNP 50V 100mA 385mW Automotive AEC-Q101 6-Pin SC-88 T/R
![SMUN5213T1G](/img/package/sot23.jpg)
SMUN5213T1G
Trans Digital BJT NPN 50V 100mA 310mW Automotive AEC-Q101 3-Pin SC-70 T/R
![MMUN2133LT1G](/img/package/sot23.jpg)
MMUN2133LT1G
ROHS compliant with ultra-low leakage current of 500 nanoamps
![MMUN2132LT1G](/img/package/sot233.jpg)
MMUN2132LT1G
MMUN2132LT1G, AEC-Q101, 50V, 4.7/4.7K, SOT23
![MMUN2112LT1G](/img/package/sot23.jpg)
MMUN2112LT1G
Trans Digital BJT PNP 50V 100mA 400mW 3-Pin SOT-23 T/R
![IRLR2908TRLPBF](/img/package/dpak.jpg)
IRLR2908TRLPBF
Transistor MOSFET
![JANTX2N3716](/files/uploads/product/s/a91cf7da665a467497aa87bfde21ff32.webp)
JANTX2N3716
JANTX2N3716: NPN Bipolar Junction Transistor
![AO4264E](/img/package/soic8.jpg)
AO4264E
The description for AO4264E highlights it as an N Channel SOIC-8 MOSFET, boasting a maximum voltage of 60V, a current rating of 13
![IXFH6N100](/img/package/to247.jpg)
IXFH6N100
MOSFETs TO-247AD ROHS
![PHE13007](/img/package/to220.jpg)
PHE13007
Dual-polarity transistors
![IRF7759L2TRPBF](/img/package/son2.jpg)
IRF7759L2TRPBF
Infineon introduces the IRF7759L2TRPBF: An advanced N-Channel MOSFET
![2N1671B](/img/package/can3.jpg)
2N1671B
TO-5 3-Pin Silicon Unijunction Transistor
![IRGP4068DPBF](/img/package/to247.jpg)
IRGP4068DPBF
600V 96A 330W N-Channel Transistor TO-247AC
![MJE18004G](/files/uploads/product/s/6c9372b87c614fa395138645643b9ea8.webp)
MJE18004G
Characteristics of this bipolar transistor include a high voltage and power rating, as well as a low current and voltage capability
![DMN3731U-7](/img/package/sot23.jpg)
DMN3731U-7
Description 2: DMN3731U-7