MMUN2215LT1G
NPN Bipolar Junction Transistor with Digital Characteristics
在庫：7,710
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部品番号 : MMUN2215LT1G
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パッケージ/ケース : TO-236-3
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Brand : onsemi
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Components Classification : Single, Pre-Biased Bipolar Transistors
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日付シート : MMUN2215LT1G データシート (PDF)
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Series : MMUN2215L
概要 MMUN2215LT1G
Designed with precision and performance in mind, the MMUN2215LT1G boasts a robust construction and cutting-edge specifications that cater to the needs of modern electronic designs. Its compact size and high-speed characteristics make it a preferred choice for applications where space savings and efficient operation are crucial. From controlling switching operations to amplifying small signals, this transistor excels in various tasks with its low power consumption and reliable performance. The RoHS compliance adds to its appeal by promoting sustainability and environmental responsibility in electronic manufacturing
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Status | Active | Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 100 mA | Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Resistor - Base (R1) | 10 kOhms | DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA | Current - Collector Cutoff (Max) | 500nA |
| Power - Max | 400 mW | Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | Supplier Device Package | SOT-23-3 (TO-236) |
| Base Product Number | MMUN2215 |
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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