NESG270034-T1-AZ
Description of NESG270034-T1-AZ: This product operates at 9
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $5.356 | $5.36 |
200 | $2.074 | $414.80 |
500 | $2.000 | $1,000.00 |
1000 | $1.964 | $1,964.00 |
在庫:9,738
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : NESG270034-T1-AZ
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パッケージ/ケース : PowerMini
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ブランド : CEL
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コンポーネントの分類 : Bipolar RF Transistors
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日付シート : NESG270034-T1-AZ データシート (PDF)
概要 NESG270034-T1-AZ
RF Transistor NPN 9.2V 750mA 1.9W Surface Mount 3-PowerMiniMold
主な特長
- This product is suitable for medium output power (2 W) amplification
- Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz
- Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz
- Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 25 V
- 3-pin power minimold (34 PKG)
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | RF Bipolar Transistors | RoHS | Details |
Transistor Type | Bipolar | Technology | SiGe |
Transistor Polarity | NPN | Operating Frequency | 900 MHz |
Emitter- Base Voltage VEBO | 2.8 V | Continuous Collector Current | 750 mA |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 150 C |
Configuration | Single | Package / Case | Power Mini-Mold |
Brand | CEL | Collector- Base Voltage VCBO | 25 V |
DC Current Gain hFE Max | 80 at 100 mA at 3 V | Height | 1.5 mm |
Length | 4.5 mm | Pd - Power Dissipation | 1.9 W |
Product Type | RF Bipolar Transistors | Factory Pack Quantity | 1000 |
Subcategory | Transistors | Type | RF Silicon Germanium |
Width | 2.5 mm |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
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