RFP8N18L
MOSFET with low on-resistance of 500mΩ at 4A and low threshold voltage of 2V at 1mA
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $0.886 | $0.89 |
| 200 | $0.343 | $68.60 |
| 500 | $0.331 | $165.50 |
| 1000 | $0.325 | $325.00 |
在庫：9,711
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : RFP8N18L
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パッケージ/ケース : TO220-3
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ブランド : Harris Corporation
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : RFP8N18L データシート (PDF)
概要 RFP8N18L
N-Channel 180 V 8A (Tc) 60W (Tc) Through Hole TO-220AB
主な特長
- Design optimized for 5 volt gate drives
- Can be driven directly from QMOS, NMOS, TTL Circuits
- Compatible with automotive drive requirements
- SOA is power-dissipation limited
- Nanosecond switching speeds
- Linear transfer characteristics
- High input impedence
- Majority carrier device
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Bulk | Product Status | Active |
| FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 180 V | Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V | Rds On (Max) @ Id, Vgs | 500mOhm @ 4A, 5V |
| Vgs(th) (Max) @ Id | 2V @ 1mA | Vgs (Max) | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V | Power Dissipation (Max) | 60W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB | Package / Case | TO-220-3 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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