NGTB10N60R2DT4G
Trans IGBT Chip N-CH 600V 20A 72W 3-Pin(2+Tab) DPAK T/R
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $1.248 | $1.25 |
| 10 | $1.076 | $10.76 |
| 30 | $0.982 | $29.46 |
| 100 | $0.876 | $87.60 |
| 500 | $0.827 | $413.50 |
| 1000 | $0.808 | $808.00 |
在庫：5,895
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : NGTB10N60R2DT4G
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パッケージ/ケース : DPAK
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Brand : onsemi
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Components Classification : Single IGBTs
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日付シート : NGTB10N60R2DT4G データシート (PDF)
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Series : NGTB10N60R2DT4G
概要 NGTB10N60R2DT4G
NGTB10N60R2DT4G is an IGBT, 600V, 10A, N-Channel.
主な特長
- 5μs Short Circuit Capability
- Low Saturation Voltage : VCE(sat)=1.7V (typ) [IC=10A, VGE=15V]High Speed Switching : tf=65ns (typ)
- High Power Dissipation/Tjmax=175°C
- Reverse Conducting II IGBT
- Diode VF=1.5V (typ) [IF=10A]
- Diode trr=90ns (typ)
応用
- General Purpose Inverter/Motor
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Manufacturer | onsemi | Product Category | IGBT Transistors |
| Technology | Si | Package / Case | DPAK-3 |
| Mounting Style | SMD/SMT | Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 1.7 V |
| Maximum Gate Emitter Voltage | - 20 V, 20 V | Continuous Collector Current at 25 C | 20 A |
| Pd - Power Dissipation | 72 W | Maximum Operating Temperature | + 175 C |
| Brand | onsemi | Continuous Collector Current Ic Max | 10 A |
| Gate-Emitter Leakage Current | +/- 100 nA | Product Type | IGBT Transistors |
| Factory Pack Quantity | 2500 | Subcategory | IGBTs |
| Unit Weight | 0.012346 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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