NGTB30N120IHSWG
Trans IGBT Chip N-CH 1200V 60A 192W 3-Pin(3+Tab) TO-247 Tube
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部品番号 : NGTB30N120IHSWG
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パッケージ/ケース : TO-247-3
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Brand : onsemi
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Components Classification : Single IGBTs
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日付シート : NGTB30N120IHSWG データシート (PDF)
概要 NGTB30N120IHSWG
The NGTB30N120IHSWG is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding switching applications. Its Field Stop (FS) Trench construction ensures robustness and cost-effectiveness, making it an ideal choice for applications requiring both low on-state voltage and minimal switching loss. This IGBT is specifically tailored for resonant or soft switching applications, where superior performance is crucial for efficient operation
主な特長
- Symmetric Gate Structure
- Low Power Consumption
- Isolated Fault Detection
応用
- Digital Signal Processing
- Wireless Communication Technologies
- Automotive Electronics Solutions
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Tube | Product Status | Obsolete |
| IGBT Type | Trench Field Stop | Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector (Ic) (Max) | 60 A | Current - Collector Pulsed (Icm) | 200 A |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 30A | Power - Max | 192 W |
| Switching Energy | 1mJ (off) | Input Type | Standard |
| Gate Charge | 220 nC | Td (on/off) @ 25°C | -/210ns |
| Test Condition | 600V, 30A, 10Ohm, 15V | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 | Base Product Number | NGTB30 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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