NGTB15N60S1EG
IGBT NGTB15N60S1EG 600V 15A TO-220-3
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $2.922 | $2.92 |
10 | $2.557 | $25.57 |
30 | $2.328 | $69.84 |
100 | $2.093 | $209.30 |
500 | $1.989 | $994.50 |
1000 | $1.942 | $1,942.00 |
在庫:8,064
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : NGTB15N60S1EG
-
パッケージ/ケース : TO220-3
-
Brand : Onsemi
-
Components Classification : Single IGBTs
-
日付シート : NGTB15N60S1EG データシート (PDF)
概要 NGTB15N60S1EG
The NGTB15N60S1EG Insulated Gate Bipolar Transistor (IGBT) is a top-of-the-line component designed for high-performance switching applications. With its Non-Punch through (NPT) Trench construction, this IGBT offers unmatched durability and reliability. Its low on-state voltage and minimal switching loss make it ideal for demanding tasks such as motor drive control and other hard switching applications. Plus, the included co-packaged reverse recovery diode ensures efficient operation with a low forward voltage. This IGBT is truly a game-changer in the world of electronics
主な特長
- Ruggedness Against High-Speed Electromagnetic Interference
- High Efficiency Power Conversion Performance
- Precise Timing and Phase Control Capability
- Silicon Carbide Material with Low Saturation Voltage
- Low Power Loss During High Frequency Operations
応用
- Wind Turbine Monitoring
- Water Pump Automation
- LED Display Management
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Status | Last Shipments | Compliance | PbAHP |
Package Type | TO-220-3 | Case Outline | 221A |
MSL Type | NA | MSL Temp (°C) | 0 |
Container Type | TUBE | Container Qty. | 50 |
ON Target | N | V(BR)CES Typ (V) | 600 |
IC Max (A) | 15 | VCE(sat) Typ (V) | 1.5 |
VF Typ (V) | 1.65 | Eoff Typ (mJ) | 0.35 |
Eon Typ (mJ) | 0.55 | Trr Typ (ns) | 270 |
Irr Typ (A) | 5 | Gate Charge Typ (nC) | 88 |
Short Circuit Withstand (µs) | 5 | PD Max (W) | 117 |
Co-Packaged Diode | Yes | Pricing ($/Unit) | Price N/A |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
NGD8205ANT4G
The NGD8205ANT4G is a Transistor IGBT Chip designed in an N-Channel configuration
NGTB50N60FLWG
Transistor IGBT chip with N-channel, 600V rating, 100A current, and 223W power in TO-247 package
MAC12SNG
Featuring 4-quadrant logic level operation, the MAC12SNG is an 800V, 12A TRIAC enclosed in a TO-220AB package
MAC8SNG
220AB 5mA 10mA 800V ROHS TRIACs
NGB8245NT4G
ON Semiconductor NGB8245NT4G IGBT Transistor 50A 500V 4-Pin D2PAK
NTP6413ANG
Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-220AB Tube
NGTB20N120LWG
Trans IGBT Chip N-CH 1200V 40A 192W 3-Pin(3+Tab) TO-247 Tube
NGTG15N60S1EG
TO-220 IGBTs ROHS
NGTB40N120IHLWG
Trans IGBT Chip N-CH 1200V 80A 260W 3-Pin(3+Tab) TO-247 Tube
NGTB30N120IHSWG
Trans IGBT Chip N-CH 1200V 60A 192W 3-Pin(3+Tab) TO-247 Tube
IRF640NSTRLPBF
IRF640NSTRLPBF MOSFET: N Channel device in D2PAK package
LM394CH
BJT bipolar transistors LM394CH
SLA4051
2 Pin Power Bipolar Transistor Plastic Epoxy SIP-12
BSS84Q-7-F
P-Channel MOSFET with a voltage rating of 50V and a current handling capacity of 0
FJP5200RTU
230V 15A 80W NPN Bipolar Transistors
SPD08P06PGBTMA1
This product, SPD08P06PGBTMA1, is a P-Channel MOSFET designed for automotive use, capable of handling up to 60V and 8
AOD8N25
With a low on-resistance of 460mΩ at 10V and 1.5A, this MOSFET can handle a power dissipation of up to 78W
SI2301DS-T1
Field-Effect Transistor with a voltage rating of 20V, current rating of 2.3A, and power dissipation of 1.25W
D1017UK
Advanced RF Power Amplifier Component for Mission-Critical Systems
IXGH24N60B
Model IXGH24N60B, a HIPERFAST IGBT Transistor rated at 600V and 48A