NP50P06SDG-E1-AY
Established in 1988, specializing in electronic distribution in France
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $0.860 | $0.86 |
| 200 | $0.334 | $66.80 |
| 500 | $0.322 | $161.00 |
| 1000 | $0.317 | $317.00 |
在庫：8,886
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : NP50P06SDG-E1-AY
-
パッケージ/ケース : TO-252-3
-
Brand : Renesas Electronics Corporation
-
Components Classification : Single FETs, MOSFETs
-
日付シート : NP50P06SDG-E1-AY データシート (PDF)
-
Series : NP50P06SDG
概要 NP50P06SDG-E1-AY
III. In the realm of power supplies, motor controls, and other power management systems, the NP50P06SDG-E1-AY power MOSFET transistor stands out as a reliable and efficient solution. With a focus on high-speed switching applications, this transistor excels with its impressive drain-source voltage rating of 60V and continuous drain current of 50A, demonstrating its capability to handle high-power loads effectively. Moreover, its low on-resistance of 16.5 mΩ and gate threshold voltage of 2.5V contribute to its efficiency and ease of use in diverse system configurations
主な特長
- Compact Package Design Available
- Fault Tolerant for System Reliability
- Wide Operating Range Supported
- Low Capacitance and Inductance
- High Frequency Response Guaranteed
- Thermal Interface Material Provided
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Status | Active | FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) | Rds On (Max) @ Id, Vgs | 16.5mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5000 pF @ 10 V | Power Dissipation (Max) | 1.2W (Ta), 84W (Tc) |
| Operating Temperature | 175°C (TJ) | Mounting Type | Surface Mount |
| Supplier Device Package | TO-252 (MP-3ZK) | Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
IRFP054NPBF
MOSFET N-Channel 55V 81A TO247AC International Rectifier IRFP054NPBF N-channel MOSFET Transistor, 81 A, 55 V, 3-Pin TO-247AC
IRFZ46NPBF
55V Hexfet Transistor
IRFZ48NPBF
Transistor with N-MOSFET technology, capable of handling up to 55V and 64A, in a TO220AB package with a power rating of 94W
IRL520NPBF
Ideal for applications requiring high power switching capabilities
IRF9Z24NPBF
Tube Packaged Transistor with P-Channel Si MOSFET Technology, 55V Voltage Rating, and 12A Current Rating
IRF9Z34NPBF
MOSFET with P-Channel, -55V Voltage, -17A Current, 100mOhm Resistance, and 23.3nC Charge
IRFB260NPBF
With a high current rating of 56A, MOSFET IRFB260NPBF is ideal for industrial and automotive applications
IRFI540NPBF
220FP package style with 3 pins and a tab for easy installation
IRFP150NPBF
channel mosfet transistor to-247ac
IRFP140NPBF
TO-247AC package with 3-pin configuration including tab for heatsink mounting
IRGPS40B120UDP
IRGPS40B120UDP: Cutting-edge IGBT Transistors Designed for 1200V Ultrafast Operation at 5-40kHz
2SD2675TL
NPN transistor with low VCE(sat)
AON6240
N-Channel 40V 27A Surface Mount 8-DFN (5x6)
2N6352
Robust design with high surge capability and fast switching performanc
ATF-58143-TR1G
ATF-58143-TR1G FET RF 5V 2GHZ
FZT658TA
The FZT658TA transistor is designed for high voltage and high current applications, providing reliable performance in compact SOT-223 package
DMP2008UFG
This MOSFET has been engineered to reduce on-state resistance
SCT2750NYTB
SCT2750NYTB SiC N-Channel MOSFET, 5.9 A, 1700 V, 2 + Tab-Pin TO-268 ROHM
SI4943BDY-T1-E3
Vishay SI4943BDY-T1-E3 P-channel MOSFET Module, 6.3 A, -20 V, 8-Pin SOIC
IXTY1R6N50D2
N-channel MOSFETs with a voltage rating of 500V and a current rating of 1.6A