NSS20101JT1G
Trans GP BJT NPN 20V 1A 300mW 3-Pin SC-89 T/R
数量 | 単価(USD) | 合計金額 |
---|---|---|
5 | $0.071 | $0.36 |
50 | $0.059 | $2.95 |
150 | $0.052 | $7.80 |
500 | $0.047 | $23.50 |
3000 | $0.043 | $129.00 |
6000 | $0.042 | $252.00 |
在庫:6,410
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : NSS20101JT1G
-
パッケージ/ケース : SC-89
-
ブランド : onsemi
-
コンポーネントのカテゴリ : Single Bipolar Transistors
-
日付シート : NSS20101JT1G データシート (PDF)
概要 NSS20101JT1G
The NSS20101JT1G from ON Semiconductor is a part of the e²PowerEdge family of Low VCE(sat) Bipolar Transistors. These miniature surface mount devices are known for their ultra low saturation voltage VCE(sat) and high current gain capability. They are specifically designed for use in low voltage, high speed switching applications where efficient energy control is essential. Ideal for use in DC-DC converters and power management in portable and battery powered products, such as cellular phones, PDAs, and digital cameras, these transistors offer affordability without compromising on performance
主な特長
- Automotive-Grade Devices for High-Reliability Systems
- AECQ101 Qualified and PPAP Capable
- Pb-Free and RoHS Compliant for Environmental Safety
- Qualified per AEC-Q100 Standard for Automotive Applications
- Designed for High-Temperature and Vibration Performance
- Supports Wide Operating Temperature Range from -40°C to 150°C
応用
- Top-notch quality materials
- Impressive performance specs
- Versatile and reliable usage
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Status | Active | Transistor Type | NPN |
Current - Collector (Ic) (Max) | 1 A | Voltage - Collector Emitter Breakdown (Max) | 20 V |
Vce Saturation (Max) @ Ib, Ic | 220mV @ 100mA, 1A | Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V | Power - Max | 300 mW |
Frequency - Transition | 350MHz | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Package / Case | SC-89, SOT-490 |
Supplier Device Package | SC-89-3 | Base Product Number | NSS20101 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、または DHL.SG、または YTC。
部品のパッケージング保証: 100% ESD 帯電防止保護を特徴とする当社のパッケージングには、高い靭性と優れた緩衝機能が組み込まれています。
-
支払い
たとえば、VISA、MasterCard、UnionPay、Western Union、PayPal などのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![NSV60600MZ4T1G](/files/uploads/product/s/4566ef2ce9bf47ee8ad0679949cfb994.webp)
NSV60600MZ4T1G
Low VCE(sat) Transistor, PNP type, with 60 volts and 6.0 amps
![BSC035N10NS5ATMA1](/files/uploads/product/s/5c0d25395ffd4311a23e4af97f7f6a0e.webp)
BSC035N10NS5ATMA1
High-current N-Channel MOSFET
![BSC030N08NS5ATMA1](/files/uploads/product/s/c7bace7d1c9e4b2db389cbf3579d1f18.webp)
BSC030N08NS5ATMA1
Tape and Reel Packaging for Automated Assembly
![STL160NS3LLH7](/files/uploads/product/s/9941f218d21b4867b962135c96dc85d4.webp)
STL160NS3LLH7
LGS LV MOSFET, product STL160NS3LLH7, is described as a MOSFET
![BSC046N10NS3GATMA1](/files/uploads/product/s/9d4d364ff5584641ba1d62d44a63649a.webp)
BSC046N10NS3GATMA1
Trans MOSFET N-CH 100V 17A 8-Pin TDSON EP T/R
![IRFZ44NSPBF](/img/package/to252.jpg)
IRFZ44NSPBF
MOSFET with a 60V voltage rating, N-channel type, HEXFET technology, 17.5mOhms on-resistance, and 16.7nC total gate charge
![BSZ160N10NS3G](/img/package/pqfn.jpg)
BSZ160N10NS3G
N-Channel Silicon MOSFET, 8A Drain Current, 100V Drain-Source Voltage, 0.016ohm On-Resistance, Plastic Package, GREEN, TDSON-8
![BSC0909NS](/img/package/so8.jpg)
BSC0909NS
N-channel 34V Trans MOSFET with 12A current rating in a TDSON EP package
![BSC0902NS](/img/package/so8.jpg)
BSC0902NS
Trans MOSFET N-CH 30V 24A 8-Pin TDSON EP T/R
![BSZ440N10NS3 G](/img/package/pqfn.jpg)
BSZ440N10NS3 G
Packaged in an 8-pin Thin Shrink Small Outline No Lead (TSDSON) with exposed pad