STL160NS3LLH7
LGS LV MOSFET, product STL160NS3LLH7, is described as a MOSFET
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部品番号 : STL160NS3LLH7
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パッケージ/ケース : PowerFLAT-5x6-8
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ブランド : STMicroelectronics
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コンポーネントのカテゴリ : Single FETs, MOSFETs
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日付シート : STL160NS3LLH7 データシート (PDF)
概要 STL160NS3LLH7
Housed in a compact PowerFLAT 5x6 package, the STL160NS3LLH7 offers excellent thermal performance and a small footprint. Its ability to operate at high temperatures, with a maximum junction temperature of 175°C, makes it a reliable choice for demanding environments. Moreover, its high avalanche energy rating of 520mJ makes it resilient against voltage transients and overcurrent conditions. With an operating temperature range of -55°C to 175°C, this MOSFET is versatile and can thrive in a wide range of settings
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | STL160NS3LLH7 | Product Status | Obsolete |
FET Type | N-Channel | Technology | Si |
Drain to Source Voltage (Vdss) | 30 V | Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 2.1mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 1mA | Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 3245 pF @ 25 V |
Power Dissipation (Max) | 84W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | PowerFlat™ (5x6) |
Package / Case | PowerFLAT-5x6-8 | Base Product Number | STL160 |
Manufacturer | STMicroelectronics | Product Category | MOSFET |
RoHS | Details | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 36 A |
Rds On - Drain-Source Resistance | 2.1 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.3 V | Qg - Gate Charge | 20 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 4.8 W | Channel Mode | Enhancement |
Brand | STMicroelectronics | Configuration | Single |
Fall Time | 19.5 ns | Product Type | MOSFET |
Rise Time | 21.3 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 50.7 ns | Typical Turn-On Delay Time | 12.4 ns |
Unit Weight | 0.002681 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品のパッケージング保証: 100% ESD 帯電防止保護を特徴とする当社のパッケージングには、高い靭性と優れた緩衝機能が組み込まれています。
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