NTD5862NT4G
NTD5862NT4G N-Channel MOSFET Transistor, 98 A, 60 V, 3-Pin DPAK ON Semiconductor
在庫:9,060
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : NTD5862NT4G
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パッケージ/ケース : TO-252-3
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ブランド : onsemi
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コンポーネントのカテゴリ : Single FETs, MOSFETs
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日付シート : NTD5862NT4G データシート (PDF)
概要 NTD5862NT4G
The NTD5862NT4G is a game-changer in the world of N-Channel MOSFETs. With a drain source voltage of 60V and a continuous drain current of 98A, this MOSFET packs a powerful punch. Its low on resistance of 0.0044Ohm at a test voltage of 10V and a threshold voltage of 4V ensure optimal performance. Plus, it's RoHS compliant, so you can rest easy knowing it meets environmental standards
主な特長
- Quick start-up time
- Excellent noise immunity
- Robust electromagnetic shielding
- Maintainable internal components
応用
- Solar Panel
- Battery Charger
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Status | Obsolete | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 98A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 5.7mOhm @ 45A, 10V | Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V | Power Dissipation (Max) | 115W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
Supplier Device Package | DPAK | Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Base Product Number | NTD5862 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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