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NTJS3157NT1G

Product NTJS3157NT1G is a N-channel MOSFET optimized for use in switching circuits, supporting up to 20V voltage and 3

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概要 NTJS3157NT1G

The NTJS3157NT1G is a N-channel MOSFET transistor with a drain source voltage (Vds) of 20V and a continuous drain current (Id) of 4A, making it suitable for a variety of applications. With an on-resistance (Rds(on)) of 0.06ohm and a threshold voltage (Vgs) of 400mV, this transistor offers efficient performance and low power consumption. The transistor case style is SC-88 with 6 pins, providing easy installation and connectivity. Operating at a maximum temperature of 150°C, this MOSFET can withstand high temperatures without compromising its performance. It has a power dissipation (Pd) of 1W and meets the MSL 1 - Unlimited standard, ensuring reliability and durability. The NTJS3157NT1G is a versatile component suitable for various automotive and industrial applications

主な特長

  • Advanced Gate Drive Technology for Improved Reliability
  • High-Speed Data Transmission Capability
  • Enhanced Electromagnetic Immunity Performance

応用

  • Load Balancing
  • Short Circuit Protection
  • Inrush Current Limiting

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Status Active Compliance PbAHP
Package Type SC-88-6 / SC-70-6 / SOT-363-6 Case Outline 419B-02
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target N Channel Polarity N-Channel
Configuration Single V(BR)DSS Min (V) 20
VGS Max (V) 8 VGS(th) Max (V) 1
ID Max (A) 3.2 PD Max (W) 1
RDS(on) Max @ VGS = 2.5 V (mΩ) 70 RDS(on) Max @ VGS = 4.5 V (mΩ) 60
Qg Typ @ VGS = 4.5 V (nC) 2.1 Qg Typ @ VGS = 10 V (nC) 6.9
Ciss Typ (pF) 500 Pricing ($/Unit) $0.1003Sample

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    部品の品質保証: 365 日

    返品・返金：90日以内

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