NTMFS5C612NLT1G
NTMFS5C612NLT1G: This product is a MOSFET featuring N-type channel design
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $1.557 | $1.56 |
| 10 | $1.337 | $13.37 |
| 30 | $1.198 | $35.94 |
| 100 | $1.055 | $105.50 |
| 500 | $0.992 | $496.00 |
| 1500 | $0.964 | $1,446.00 |
在庫：5,243
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : NTMFS5C612NLT1G
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パッケージ/ケース : SO8FL-4
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Brand : Onsemi
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Components Classification : Single FETs, MOSFETs
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日付シート : NTMFS5C612NLT1G データシート (PDF)
概要 NTMFS5C612NLT1G
Power MOSFET 60 V, 196 A, 1.5 mΩ, Single N−Channel
主な特長
- Fast Rise Time and Fall Time
- Low Input Capacitance
- High Linearity and Distortion Ratio
- Precise Voltage Control
- High Temperature Range Operation
- Robust and Durable Construction
応用
- LED lighting systems
- Automotive power supplies
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Status | Active | Compliance | PbAHP |
| Package Type | SO-8FL / DFN-5 | Case Outline | 488AA |
| MSL Type | 1 | MSL Temp (°C) | 260 |
| Container Type | REEL | Container Qty. | 1500 |
| ON Target | Y | Channel Polarity | N-Channel |
| Configuration | Single | V(BR)DSS Min (V) | 60 |
| VGS Max (V) | ±20 | VGS(th) Max (V) | 2 |
| ID Max (A) | 226 | PD Max (W) | 167 |
| RDS(on) Max @ VGS = 4.5 V (mΩ) | 2.3 | RDS(on) Max @ VGS = 10 V (mΩ) | 1.5 |
| Qg Typ @ VGS = 4.5 V (nC) | 22 | Qg Typ @ VGS = 10 V (nC) | 91 |
| Ciss Typ (pF) | 6660 | Pricing ($/Unit) | $2.7019 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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