IXER35N120D1
The IXER35N120D1 is a sophisticated Trans IGBT Chip offering N-Channel functionality
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部品番号 : IXER35N120D1
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パッケージ/ケース : ISOPLUS 247-3
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Brand : IXYS
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Components Classification : Single IGBTs
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日付シート : IXER35N120D1 データシート (PDF)
概要 IXER35N120D1
The IXER35N120D1 is a high power IGBT (Insulated Gate Bipolar Transistor) designed for use in power electronic applications. It is manufactured by IXYS Corporation, a global supplier of advanced semiconductor devices.This transistor has a voltage rating of 1200V and a current rating of 35A, making it suitable for high power applications such as motor drives, inverters, and power supplies. The IXER35N120D1 has a low on-state voltage drop, which helps to reduce power loss and improve efficiency in power conversion systems.The IXER35N120D1 is housed in a TO-247 package, which provides excellent thermal performance and allows for easy mounting on a heat sink. It also features a built-in temperature sensor to monitor the junction temperature, helping to protect the device from overheating.
主な特長
- Lower Eoff and Vce(sat)
- Soft Recovery Diode Built-in
- High Current Handling Capability
- Isolated Base Plate for Easy Installation
- Robust Construction for Long Lifespan
- Minimal Heat Generation
応用
- Power supplies
- Motor drives
- Industrial inverters
- Uninterruptible power supplies
- Renewable energy systems
- Electric vehicle charging systems
- Welding equipment
- Induction heating systems
- Switch-mode power supplies
- Security systems
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | IGBT Transistors | RoHS | Details |
Technology | Si | Package / Case | ISOPLUS 247-3 |
Mounting Style | SMD/SMT | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2.2 V |
Maximum Gate Emitter Voltage | - 20 V, + 20 V | Pd - Power Dissipation | 200 W |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Brand | IXYS | Continuous Collector Current | 50 A |
Continuous Collector Current Ic Max | 50 A | Gate-Emitter Leakage Current | 200 nA |
Height | 21.34 mm | Length | 16.13 mm |
Product Type | IGBT Transistors | Factory Pack Quantity | 30 |
Subcategory | IGBTs | Width | 5.21 mm |
Unit Weight | 0.186952 oz |
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部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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