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NTMTS4D3N15MC

Trans MOSFET N-CH 150V 22A 8-Pin DFNW EP Reel

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概要 NTMTS4D3N15MC

The NTMTS4D3N15MC product is an exemplary N-Channel PTNG 150V MV MOSFET, meticulously designed and produced with the latest Power Trench process incorporating Shielded Gate technology by ON Semiconductor. This optimized manufacturing process is dedicated to minimizing on-state resistance while upholding superior switching performance

主な特長

  • Fast Response Time
  • Low Power Consumption
  • High Speed Logic
  • Elastic Wave Filter
  • Smart Power Switching
  • Precision Current Control

応用

  • Compact Power Module
  • Customized Semiconductor Solutions

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Status Active FET Type N-Channel
Technology Si Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 174A (Tc) Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 4.45mOhm @ 95A, 10V Vgs(th) (Max) @ Id 4.5V @ 521µA
Gate Charge (Qg) (Max) @ Vgs 79 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6514 pF @ 75 V Power Dissipation (Max) 5W (Ta), 293W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Supplier Device Package 8-DFNW (8.3x8.4) Package / Case 8-PowerTDFN
Manufacturer onsemi Product Category MOSFET
RoHS Details REACH Details
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 150 V
Id - Continuous Drain Current 174 A Rds On - Drain-Source Resistance 4.45 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 4.5 V
Qg - Gate Charge 79 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 293 W
Channel Mode Enhancement Brand onsemi
Product Type MOSFET Factory Pack Quantity 3000
Subcategory MOSFETs

保証と返品

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  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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