PMDXB600UNEZ
Tape and reel packaged N-channel MOSFET transistor with 0.6A current rating and 20V voltage handling, enclosed in a 6-pin DFN-B EP package
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 5 | $0.103 | $0.52 |
| 50 | $0.080 | $4.00 |
| 150 | $0.068 | $10.20 |
| 500 | $0.058 | $29.00 |
| 2500 | $0.051 | $127.50 |
| 5000 | $0.048 | $240.00 |
在庫：8,133
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : PMDXB600UNEZ
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パッケージ/ケース : 6-XFDFNExposedPad
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Brand : Nexperia USA Inc.
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Components Classification : FET, MOSFET Arrays
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日付シート : PMDXB600UNEZ データシート (PDF)
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Series : PMDXB600UNE
概要 PMDXB600UNEZ
The PMDXB600UNEZ is a cutting-edge Dual N-channel enhancement mode Field-Effect Transistor (FET) enclosed in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. This innovative product utilizes advanced Trench MOSFET technology to deliver superior performance in a compact form factor
主な特長
- Fast switching time
- Low drain-source current IDSON = 1 μA
- Elegant design for high power applications
応用
- Robotics development
- Machine tools
- Power electronics
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | TrenchFET® | Product Status | Active |
| Technology | MOSFET (Metal Oxide) | Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate | Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 600mA | Rds On (Max) @ Id, Vgs | 620mOhm @ 600mA, 4.5V |
| Vgs(th) (Max) @ Id | 950mV @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 0.7nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 21.3pF @ 10V | Power - Max | 265mW |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Package / Case | 6-XFDFN Exposed Pad | Supplier Device Package | DFN1010B-6 |
| Base Product Number | PMDXB600 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
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