PSMN5R0-30YL
5-pin (4+Tab) Transistor MOSFET designed for high current applications and low on-state resistance
在庫:9,496
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : PSMN5R0-30YL
-
パッケージ/ケース : SOT-669-5
-
ブランド : Nexperia
-
コンポーネントの分類 : Single FETs, MOSFETs
-
日付シート : PSMN5R0-30YL データシート (PDF)
概要 PSMN5R0-30YL
When it comes to high voltage applications, the PSMN5R0-30YL N-channel Power MOSFET stands out as a reliable and efficient choice. With a maximum drain-source voltage of 30V and a continuous drain current of 120A, this MOSFET is designed to meet the demands of high-power density environments. Its low on-resistance of 5 mΩ and low gate charge contribute to improved efficiency and reduced power dissipation, helping you save on energy costs while enhancing performance. The PSMN5R0-30YL's high avalanche capability ensures robust protection against voltage spikes and electrical overstress events, making it a trustworthy option for demanding applications
主な特長
- Advanced EMI filtering capabilities
- Low capacitance to ground
- Robust construction for harsh environments
- Wide operating temperature range
応用
- Industrial use
- Energy efficiency
- Electronic devices
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | MOSFET | Mounting Style | SMD/SMT |
Package / Case | SOT-669-5 | Brand | Nexperia |
Product Type | MOSFET | Subcategory | MOSFETs |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![BSS138PS,115](/img/package/tssop6.jpg)
BSS138PS,115
Trans MOSFET N-CH 60V 0.32A Automotive AEC-Q101 6-Pin TSSOP T/R
![IRFPS3810PBF](/img/package/to247.jpg)
IRFPS3810PBF
pin configuration with tab for easy installation and connection
![IRFPS40N50L](/img/package/to247.jpg)
IRFPS40N50L
IRFPS40N50L N-Channel MOSFET Transistor, 46 A, 500 V HEXFET, 3-Pin Super-247 International Rectifier
![IRGPS66160DPBF](/img/package/to3.jpg)
IRGPS66160DPBF
Insulated Gate Bipolar Transistor
![FS820R08A6P2BBPSA1](/img/package/module.jpg)
FS820R08A6P2BBPSA1
Product FS820R08A6P2BBPSA1
![MPS4124](/img/package/to92.jpg)
MPS4124
Trans GP BJT NPN 25V 0.2A 625000mW 3-Pin TO-92 T/R
![MPS8599](/img/package/to92.jpg)
MPS8599
92, 3 pin, TO-226
![PSMN014-40YS,115](/img/package/sc70.jpg)
PSMN014-40YS,115
Nexperia PSMN014-40YS,115
![PSMN015-100YLX](/img/package/sot669.jpg)
PSMN015-100YLX
LFPAK56 packaged logic level MOSFET with 15mΩ on-resistance at 100V
![PSMN020-100YS,115](/img/package/sc70.jpg)
PSMN020-100YS,115
37 mOhm Resistance
![SI7216DN-T1-E3](/img/package/power33.jpg)
SI7216DN-T1-E3
This device is ideal for power management and control circuits in various electronic systems
![SI3932DV-T1-GE3](/img/package/sot236.jpg)
SI3932DV-T1-GE3
High Efficiency N-channel Voltage-Controlled Switch
![BUX23](/img/package/to-3.jpg)
BUX23
BUX23 is a Transistor commonly used for a variety of general purpose applications, featuring a NPN polarity and a TO-3 package with 3 pins and 2 tabs
![APT5010LVRG](/img/package/to264.jpg)
APT5010LVRG
Product APT5010LVRG, a MOSFET with a voltage rating of 500V and a resistance of 10 Ohms, presented in TO-264 package, meets RoHS compliance
![NVMFD5C470NLT1G](/img/package/so8.jpg)
NVMFD5C470NLT1G
40V 11A Automotive AEC-Q101 N-CH Trans MOSFET 8-Pin DFN EP T/R
![ZXMHC3F381N8TC](/img/package/soic8.jpg)
ZXMHC3F381N8TC
Transistor with N/P-MOSFET technology, providing unipolar functionality at voltage ranges of 30V and -30V, and current ratings of 3
![IRF9511](/img/package/to220ab.jpg)
IRF9511
IRF9511: Si Power MOSFET, 80V, 3A, 1.2Ω, P-Channel
![NTE6401](/img/package/can3.jpg)
NTE6401
Transistors in TO-206AA (TO-18) packaging, rated for 300mW power dissipation, conforming to ROHS requirements
![MMBT3906-7](/img/package/to-3.jpg)
MMBT3906-7
BJT MMBT3906-7: A semiconductor device
![NTE290A](/img/package/to226.jpg)
NTE290A
NTE290A is a PNP transistor with a maximum voltage rating of 80V, a current capacity of 0.5A, and a power dissipation of 0.6W, packaged in TO92 form