QS8J13TR
QS8J13TR is a high-performance semiconductor component designed for use in various electronic applications
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部品番号 : QS8J13TR
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パッケージ/ケース : TSMT8
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Brand : ROHM
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Components Classification : FET, MOSFET Arrays
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日付シート : QS8J13TR データシート (PDF)
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Series : QS8J13
概要 QS8J13TR
The QS8J13TR is a powerful P-Channel Power Field-Effect Transistor designed for high-performance applications. With a maximum current rating of 5.5A and a low on-resistance of 0.022ohm, this transistor ensures efficient power delivery with minimal losses. Its 2-Element design allows for versatile use in a variety of circuit configurations
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Ihs Manufacturer | ROHM CO LTD | Package Description | SMALL OUTLINE, R-PDSO-F8 |
| Reach Compliance Code | compliant | ECCN Code | EAR99 |
| Factory Lead Time | 53 Weeks, 1 Day | Samacsys Manufacturer | ROHM Semiconductor |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 12 V |
| Drain Current-Max (ID) | 5.5 A | Drain-source On Resistance-Max | 0.022 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-F8 |
| JESD-609 Code | e2 | Moisture Sensitivity Level | 1 |
| Number of Elements | 2 | Number of Terminals | 8 |
| Operating Mode | ENHANCEMENT MODE | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | P-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 18 A | Surface Mount | YES |
| Terminal Finish | TIN COPPER | Terminal Form | FLAT |
| Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 10 |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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