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RFD16N05LSM9A

Trans MOSFET N-CH Si 50V 16A 3-Pin(2+Tab) DPAK T/R

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概要 RFD16N05LSM9A

The RFD16N05LSM9A is a high-performance N-Channel logic level power MOSFET that stands out due to its MegaFET manufacturing process. This process, known for its utilization of silicon and outstanding performance, utilizes feature sizes similar to those found in LSI integrated circuits. Designed for use with 5V logic level driving sources, this MOSFET is ideal for a variety of applications including programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers, and emitter switches for bipolar transistors. What sets this MOSFET apart from others is its special gate oxide design, which allows for full rated conductance at gate biases between 3V to 5V, enabling seamless on-off power control directly from logic circuit supply voltages

主な特長

  • High-Speed Switching
  • Rapid Di/dt Response
  • Low Saturation Currents
  • Safe Operating Areas Defined
  • Millisecond Recovery Times
  • Fast Turn-Off Characteristics

応用

  • Enhanced server capabilities
  • Efficient workstation power
  • Reliable performance

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Max) @ Id, Vgs 47mOhm @ 16A, 5V Vgs(th) (Max) @ Id 2V @ 250mA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V Vgs (Max) ±10V
Power Dissipation (Max) 60W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package TO-252AA
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63 Base Product Number RFD16N05

保証と返品

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  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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