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RHP020N06T100

The RHP020N06T100 MOSFET offers a low on-resistance of 200mΩ at 10V, 2A, ensuring efficient conduction in various circuit applications

数量 単価(USD) 合計金額
5 $0.214 $1.07
50 $0.188 $9.40
150 $0.179 $26.85
1000 $0.165 $165.00
2000 $0.159 $318.00
5000 $0.155 $775.00

在庫：3,743

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください RHP020N06T100 このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 RHP020N06T100

For applications requiring a reliable and efficient N-channel MOSFET, the RHP020N06T100 offers a voltage rating of 60V and a continuous current rating of 2.5A. Its ESD protection, flywheel diode, and separate Schottky diode provide robust safeguards against electrical disturbances. With an on-resistance of 0.34 ohms and a gate-source voltage rating of 4V for on-resistance measurement, this MOSFET delivers superior performance. The typical gate threshold voltage of 2.5V ensures precise control in a variety of electronic systems. In addition, this product is RoHS compliant, demonstrating its adherence to strict environmental standards

主な特長

  • 1) Low On-resistance.
  • 2) High speed switching.
  • 3) Wide SOA.

応用

SWITCHING

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer ROHM CO LTD
Package Description SMALL OUTLINE, R-PSSO-F3 Pin Count 3
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 52 Weeks Samacsys Manufacturer ROHM Semiconductor
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V Drain Current-Max (Abs) (ID) 2 A
Drain Current-Max (ID) 2 A Drain-source On Resistance-Max 0.34 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PSSO-F3
JESD-609 Code e2 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 2 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish TIN COPPER Terminal Form FLAT
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING Transistor Element Material SILICON

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

  • 配送と梱包

    配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。

    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

  • 支払い

    たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。

    特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。

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