RSD150N06TL
The RSD150N06TL is a silicon-based Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) with a maximum drain current of 15A
在庫:7,284
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : RSD150N06TL
-
パッケージ/ケース : TO-252-3
-
Brand : Rohm Semiconductor
-
Components Classification : Single FETs, MOSFETs
-
日付シート : RSD150N06TL データシート (PDF)
-
Series : RSD150N06
概要 RSD150N06TL
The RSD150N06TL is a robust N-channel power MOSFET transistor that is engineered for demanding high-power applications. With a substantial drain current rating of 80A and a maximum drain-source voltage of 60V, this transistor is well-suited for a wide range of power switching tasks. Its ultra-low on-resistance of 0.015 ohms is a standout feature, as it effectively minimizes power losses and enhances overall efficiency. Additionally, the RSD150N06TL boasts impressive switching speed characteristics, enabling swift turn-on and turn-off times that are essential for applications requiring high-speed operation
主な特長
- 1) Low on-resistance.
- 2) Fast switching speed.
- 3) Drive circuits can be simple.
- 4) Parallel use is easy.
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Package | Tape & Reel (TR) | Product Status | Active |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V | Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V | Rds On (Max) @ Id, Vgs | 40mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id | 3V @ 1mA | Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 930 pF @ 10 V |
Power Dissipation (Max) | 20W (Tc) | Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | CPT3 |
Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Base Product Number | RSD150 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![RSQ045N03TR](/files/uploads/product/s/2101ce5bd4ad4d0296248110ef094331.webp)
RSQ045N03TR
High-Performance N-Channel MosFet with Surface Mount Design, 56 mOhm Resistance, and 4 V Drive Voltage
![RSU002P03T106](/files/uploads/product/s/RSU002P03T106-22111451.webp)
RSU002P03T106
RSU002P03T106 is a P-channel MOSFET featuring a maximum voltage rating of 30V
![RSH070P05GZETB](/files/uploads/product/s/c5392e68b64948739ebde64d9079ead9.webp)
RSH070P05GZETB
P-Channel Silicon FET
![RSD080N06TL](/img/package/dpak.jpg)
RSD080N06TL
ROHM - RSD080N06TL - MOSFET, N-CH, 60V, 8A, TO-252
![RSD131P10TL](/img/package/dpak2.jpg)
RSD131P10TL
With a designation of RSD131P10TL
![RSD160P05TL](/img/package/dpak.jpg)
RSD160P05TL
Product RSD160P05TL is a MOSFET with a P-channel, capable of handling a voltage of -45V and current of -16A in a TO-252 package
![RSE002N06TL](/img/package/sc70.jpg)
RSE002N06TL
Silicon MOSFET designed for surface mount applications, featuring 150 mW power dissipation
![RSF015N06TL](/img/package/mt200.jpg)
RSF015N06TL
Ready to ship RoHS compliant product
![RSF010P05TL](/img/package/smd.jpg)
RSF010P05TL
SOT-323-3 MOSFETs with ROHS compliance
![BC857BMTF](/img/package/sot23.jpg)
BC857BMTF
Small Signal PNP Transistor with 100 mA and 45 V
![Q601E3](/img/package/to92.jpg)
Q601E3
TRIAC 600V 20A 3-Pin TO-92
![IRF7389TRPBF](/img/package/so8.jpg)
IRF7389TRPBF
Available in tape and reel packaging
![SI4056DY-T1-GE3](/img/package/soic8.jpg)
SI4056DY-T1-GE3
100V 11.1A MOSFET with 23mΩ resistance at 15A
![BSM100GB120DLC](/img/package/module.jpg)
BSM100GB120DLC
BSM100GB120DLC is a dual IGBT module with a voltage rating of 1200V and a current rating of 100A
![2N6027RL1G](/img/package/to92.jpg)
2N6027RL1G
2000-REEL of Programmable Unijunction Transistor, TO-92 (TO-226) with 5.33mm Body Height
![BTB16-600BRG](/img/package/to220.jpg)
BTB16-600BRG
TRIAC 600V 168A 3-Pin(3+Tab) TO-220AB Tube
![IXGH50N60B](/img/package/to247ad.jpg)
IXGH50N60B
This IGBT chip offers reliable performance and is suitable for a variety of industrial and automotive applications
![SI3457CDV-T1-E3](/img/package/tsop6.jpg)
SI3457CDV-T1-E3
SI3457CDV-T1-E3, P-channel MOSFET Transistor 4.1 A 30 V, 6-Pin TSOP
![BSM100GAL120DLCK](/img/package/module.jpg)
BSM100GAL120DLCK
Insulated Gate Bipolar Transistor with a maximum collector current of 205A and a breakdown voltage of 1200V