• packageimg
packageimg

RTQ045N03TR

High-performance transistor suitable for various electronic applications

数量 単価(USD) 合計金額
1 $0.644 $0.64
200 $0.258 $51.60
500 $0.249 $124.50
1000 $0.245 $245.00

在庫:9,899

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください RTQ045N03TR このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 RTQ045N03TR

The RTQ045N03TR is a power MOSFET manufactured by Richtek. It is a N-channel MOSFET with a voltage rating of 30V and a continuous drain current of 45A. The device is housed in a TO-263 package which allows for efficient heat dissipation during operation. The RTQ045N03TR features low RDS(ON) resistance of 4.5mΩ, making it suitable for high current applications where low power dissipation is crucial. This MOSFET also has a fast switching speed and low gate charge, allowing for efficient operation in applications requiring high frequencies.The MOSFET is designed for use in a wide range of applications including DC-DC converters, synchronous rectification, motor control, power management systems, and battery protection circuits. The device is designed to operate at high efficiency levels and withstand high power loads.

主な特長

  • Fast response to changing conditions
  • Silicon-based for high-reliability operation
  • Low noise emission and reduced electromagnetic interference
  • Precise control over current flow and voltage regulation
  • Suitable for power supplies, motor drives, and DC/DC converters
  • Fully RoHS compliant and lead-free for environmental protection

応用

  • Electric vehicles
  • Charge controllers
  • Electronic components

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-457T-6 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 4.5 A Rds On - Drain-Source Resistance 420 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 1.5 V
Qg - Gate Charge 7.6 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.25 W
Channel Mode Enhancement Series RTQ045N03
Brand ROHM Semiconductor Configuration Single
Fall Time 31 ns Height 0.85 mm
Length 2.9 mm Product MOSFET Small Signals
Product Type MOSFET Rise Time 31 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-Off Delay Time 45 ns Typical Turn-On Delay Time 13 ns
Width 1.6 mm Part # Aliases RTQ045N03
Unit Weight 0.000494 oz

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金:90日以内

    返品・交換:90日以内

  • 配送と梱包

    配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。

    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

  • 支払い

    たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。

    特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。