RTQ045N03TR
High-performance transistor suitable for various electronic applications
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $0.644 | $0.64 |
200 | $0.258 | $51.60 |
500 | $0.249 | $124.50 |
1000 | $0.245 | $245.00 |
在庫:9,899
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : RTQ045N03TR
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パッケージ/ケース : SOT-457T-6
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ブランド : Rohm Semiconductor
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : RTQ045N03TR データシート (PDF)
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Series : RTQ045N03
概要 RTQ045N03TR
The RTQ045N03TR is a power MOSFET manufactured by Richtek. It is a N-channel MOSFET with a voltage rating of 30V and a continuous drain current of 45A. The device is housed in a TO-263 package which allows for efficient heat dissipation during operation. The RTQ045N03TR features low RDS(ON) resistance of 4.5mΩ, making it suitable for high current applications where low power dissipation is crucial. This MOSFET also has a fast switching speed and low gate charge, allowing for efficient operation in applications requiring high frequencies.The MOSFET is designed for use in a wide range of applications including DC-DC converters, synchronous rectification, motor control, power management systems, and battery protection circuits. The device is designed to operate at high efficiency levels and withstand high power loads.
主な特長
- Fast response to changing conditions
- Silicon-based for high-reliability operation
- Low noise emission and reduced electromagnetic interference
- Precise control over current flow and voltage regulation
- Suitable for power supplies, motor drives, and DC/DC converters
- Fully RoHS compliant and lead-free for environmental protection
応用
- Electric vehicles
- Charge controllers
- Electronic components
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-457T-6 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 4.5 A | Rds On - Drain-Source Resistance | 420 mOhms |
Vgs - Gate-Source Voltage | - 12 V, + 12 V | Vgs th - Gate-Source Threshold Voltage | 1.5 V |
Qg - Gate Charge | 7.6 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.25 W |
Channel Mode | Enhancement | Series | RTQ045N03 |
Brand | ROHM Semiconductor | Configuration | Single |
Fall Time | 31 ns | Height | 0.85 mm |
Length | 2.9 mm | Product | MOSFET Small Signals |
Product Type | MOSFET | Rise Time | 31 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 45 ns | Typical Turn-On Delay Time | 13 ns |
Width | 1.6 mm | Part # Aliases | RTQ045N03 |
Unit Weight | 0.000494 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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