SIC401ACD-T1-GE3

Meet the SIC401ACD-T1-GE3, a top-of-the-line silicon carbide MOSFET specifically crafted by Vishay Semiconductor for high-power applications. Part of the renowned Gen 4 SiC MOSFET series, this device features a compact TO-247-3 package that ensures minimal switching losses and exceptional power density. Ideal for power conversion systems like industrial motor drives and solar inverters, the SIC401ACD-T1-GE3 impresses with its low ON-resistance and lightning-fast switching speeds, enabling engineers to achieve unparalleled efficiency and reduced system losses. Designed to excel in high-temperature environments, this MOSFET guarantees unparalleled reliability and heightened system performance even in the most demanding conditions. By prioritizing efficiency and minimizing heat dissipation, it contributes to substantial energy savings and an extended lifespan for power electronics systems. Additionally, its seamless compatibility with standard gate drive voltages streamlines integration into existing designs, giving engineers unmatched flexibility across various applications

主な特長

• SIC401ACD-T1-GE3 is a high-reliability diode
• It features low forward voltage and fast switching times
• Packaged in a compact, easy-to-handle format

応用

• Highly efficient power management
• Optimal voltage handling capabilities
• Perfect for DC-DC converters