SPP11N65C3
Infineon SPP11N65C3 N-channel MOSFET Transistor
在庫：8,649
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- 365日の品質保証
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部品番号 : SPP11N65C3
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パッケージ/ケース : TO-220
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ブランド : Infineon
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : SPP11N65C3 データシート (PDF)
概要 SPP11N65C3
Designed for reliability and efficiency, the SPP11N65C3 MOSFET power transistor offers impressive performance capabilities for a variety of power applications. Its maximum drain-source voltage of 650V and continuous drain current of 11A make it suitable for high-power requirements. The transistor's low on-state resistance of 0.5 ohms reduces power losses and improves overall efficiency, while its fast switching speed and low gate charge ensure optimal performance in high-frequency operations. Housed in a TO-220 package, the SPP11N65C3 provides thermal stability and easy mounting, with low thermal resistance for efficient heat dissipation and reliable operation even under heavy loads
主な特長
- Fast switching speed
- Low power consumption
- High reliability guaranteed
応用
- Switched-mode power supplies
- Motor control applications
- Lighting systems
- Consumer electronics
- Industrial applications
- Automotive systems
- Power factor correction
- Solar inverters
- UPS (Uninterruptible Power Supplies)
- High power density converters
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| RthJC max | 1.0 K/W | VGS(th) max | 3.9 V |
| VGS(th) min | 2.1 V | IDpuls max | 33.0 A |
| RthJA max | 62.0 K/W | Operating Temperature min | -55.0 °C |
| Ptot max | 125.0 W | VDS max | 650.0 V |
| Mounting | THT | Mode | Enhancement |
| Package | TO-220 | Polarity | N |
| ID max | 11.0 A | RDS (on) max | 400.0 mΩ |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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