SQM120N10-3M8_GE3
TO-263 MOSFET featuring N-channel design with a maximum voltage of 100 volts and current rating of 120 amps
在庫:3,577
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部品番号 : SQM120N10-3M8_GE3
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パッケージ/ケース : D2PAK-3
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Brand : Siliconix
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Components Classification : Single FETs, MOSFETs
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日付シート : SQM120N10-3M8_GE3 データシート (PDF)
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Series : SQM120N10-3M8
概要 SQM120N10-3M8_GE3
主な特長
- Achieve High Efficiency
- Robust Design for Automotive Use
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | D2PAK-3 (TO-263-3) |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 100 V | Id - Continuous Drain Current | 120 A |
Rds On - Drain-Source Resistance | 3 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.5 V | Qg - Gate Charge | 190 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 375 W | Channel Mode | Enhancement |
Qualification | AEC-Q101 | Tradename | TrenchFET |
Series | SQ | Brand | Vishay / Siliconix |
Configuration | Single | Fall Time | 12 ns |
Forward Transconductance - Min | 82 S | Height | 4.83 mm |
Length | 10.67 mm | Product Type | MOSFET |
Rise Time | 110 ns | Factory Pack Quantity | 800 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 40 ns | Typical Turn-On Delay Time | 16 ns |
Width | 9.65 mm | Unit Weight | 0.139332 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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