SSM3K37FS,LF
Low power 100mW MOSFET with 1V threshold voltage at 100mA
在庫:6,325
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : SSM3K37FS,LF
-
パッケージ/ケース : SOT416-3
-
ブランド : Toshiba Semiconductor And Storage
-
コンポーネントの分類 : Single FETs, MOSFETs
-
日付シート : SSM3K37FS,LF データシート (PDF)
概要 SSM3K37FS,LF
N-Channel 20 V 200mA (Ta) 100mW (Ta) Surface Mount SSM
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-416-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 200 mA | Rds On - Drain-Source Resistance | 2.2 Ohms |
Vgs - Gate-Source Voltage | - 10 V, + 10 V | Vgs th - Gate-Source Threshold Voltage | 350 mV |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 100 mW | Channel Mode | Enhancement |
Tradename | U-MOSIII | Series | SSM3K36 |
Brand | Toshiba | Configuration | Single |
Height | 0.7 mm | Length | 1.6 mm |
Product Type | MOSFET | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 36 ns | Typical Turn-On Delay Time | 18 ns |
Width | 0.8 mm | Unit Weight | 0.000085 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![SSM3J328R,LF](/files/uploads/product/s/d0364abaefdb4bcf86d7d9042bd6dd84.webp)
SSM3J328R,LF
29.8m¦¸@4.5V,3A 1W 1V@1mA
![DMP4015SSSQ-13](/files/uploads/product/s/9aa321f18ff5478d8b207f37f7933d2e.webp)
DMP4015SSSQ-13
Green Plastic SOP-8 Transistor with 7.8A Current Rating
![BSS138AKAR](/img/package/sot233.jpg)
BSS138AKAR
Trans MOSFET N-CH 60V 0.2A Automotive AEC-Q101 3-Pin SOT-23 T/R
![BSS138PS,115](/img/package/tssop6.jpg)
BSS138PS,115
Trans MOSFET N-CH 60V 0.32A Automotive AEC-Q101 6-Pin TSSOP T/R
![BSS214N H6327](/img/package/sot23.jpg)
BSS214N H6327
Low On-Resistance N-Channel FET BSS214N
![BSS214NH6327XTSA1](/img/package/sot23.jpg)
BSS214NH6327XTSA1
14NH6327XTSA1,'BSS214N Series 20 V 1
![BSS64](/img/package/sot233.jpg)
BSS64
Trans GP BJT NPN 80V 0.2A 3-Pin SOT-23 T/R
![BSS806NEH6327XTSA1](/img/package/sot23.jpg)
BSS806NEH6327XTSA1
Comes in tape and reel packaging for convenient storage and assembly
![BSS670S2LH6327XTSA1](/img/package/sot23.jpg)
BSS670S2LH6327XTSA1
This is a MOSFET with an N-type channel, designed for a maximum voltage of 55 volts and a current of 540 milliamps, enclosed in an SOT-23-3 package
![DMG4406LSS-13](/img/package/so5.jpg)
DMG4406LSS-13
With a legacy dating back to 1988, DMG4406LSS-13 stands as a distinguished electronic distributor in France
![IXTN210P10T](/img/package/sot.jpg)
IXTN210P10T
SOT-227B-packaged P-channel transistor designed for heavy-duty applications up to 100 volts and 210 amps
![IXTT1N450HV](/img/package/to268.jpg)
IXTT1N450HV
High Voltage N Channel TO-268AA MOSFET
![SI7116DN-T1-E3](/img/package/power33.jpg)
SI7116DN-T1-E3
Fast switching N-Channel MOSFET with 40-V (D-S) capability
![IRL2505PBF](/img/package/to220.jpg)
IRL2505PBF
Description of IRL2505PBF: A high-power N-channel MOSFET transistor
![MW6S010NR1](/img/package/to3.jpg)
MW6S010NR1
channel broadband RF power MOSFET
![BUK7275-100A](/img/package/dpak.jpg)
BUK7275-100A
Trans MOSFET N-CH 100V 21.7A Automotive 3-Pin(2+Tab) DPAK
![IXBX50N360HV](/img/package/to247.jpg)
IXBX50N360HV
IGBTs 660W 125A 3.6kV TO-247P ROHS
![NTMS10P02R2G](/img/package/soic8.jpg)
NTMS10P02R2G
Channel 20V 14mOhm
![PMV60EN](/img/package/sot23.jpg)
PMV60EN
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
![SI4948BEY-T1-E3](/img/package/soic8.jpg)
SI4948BEY-T1-E3
The SI4948BEY-T1-E3 transistor features two P-channel MOSFETs in one component