STD100N10F7
STD100N10F7 STMicroelectronics Transistors MOSFETs N-CH 100V 80A 3-Pin(2+Tab) DPAK T/R - Arrow.com
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $1.678 | $1.68 |
10 | $1.464 | $14.64 |
30 | $1.331 | $39.93 |
100 | $1.193 | $119.30 |
500 | $1.131 | $565.50 |
1000 | $1.105 | $1,105.00 |
在庫:4,052
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : STD100N10F7
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パッケージ/ケース : DPAK
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Brand : ST
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Components Classification : Single FETs, MOSFETs
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日付シート : STD100N10F7 データシート (PDF)
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Series : STD100N10F7
概要 STD100N10F7
Leveraging the latest advancements in STripFET F7 technology, the STD100N10F7 Power MOSFET showcases a sophisticated trench gate structure. This configuration effectively reduces on-state resistance, resulting in superior performance and efficiency in power systems. Additionally, the device features decreased internal capacitance and gate charge, enabling seamless and rapid switching operations for enhanced functionality
主な特長
- Ultra-low power consumption
- High reliability guarantee
- Rapid response time
- Accurate current sensing
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Source Content uid | STD100N10F7 | Part Life Cycle Code | Active |
Ihs Manufacturer | STMICROELECTRONICS | Package Description | TO-220FP, 3 PIN |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 53 Weeks, 1 Day | Samacsys Manufacturer | STMicroelectronics |
Avalanche Energy Rating (Eas) | 400 mJ | Case Connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 100 V |
Drain Current-Max (Abs) (ID) | 80 A | Drain Current-Max (ID) | 32 A |
Drain-source On Resistance-Max | 0.008 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 120 W |
Pulsed Drain Current-Max (IDM) | 180 A | Surface Mount | NO |
Terminal Finish | MATTE TIN | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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