SI2301-TP
The product SI2301-TP is a P-channel metal-oxide-semiconductor field-effect transistor
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 10 | $0.043 | $0.43 |
| 100 | $0.034 | $3.40 |
| 300 | $0.030 | $9.00 |
| 3000 | $0.027 | $81.00 |
| 6000 | $0.024 | $144.00 |
| 9000 | $0.023 | $207.00 |
在庫：6,806
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : SI2301-TP
-
パッケージ/ケース : SOT23-3
-
ブランド : Micro Commercial Components (Mcc)
-
コンポーネントの分類 : Single FETs, MOSFETs
-
日付シート : SI2301-TP データシート (PDF)
概要 SI2301-TP
Housed in a convenient SOT-23 package, the SI2301-TP is perfect for space-constrained designs that require reliable operation in challenging environments. With a temperature coefficient ranging from -55 to 150 degrees Celsius, this FET ensures consistent performance across a variety of operating conditions. Whether used in power management systems, battery charging circuits, or load switching applications, the SI2301-TP delivers high efficiency and low power consumption
主な特長
- Silicon-based solution
- Efficient power management
- Fast switching speed achieved
- Compact SOT-23 package design
- Low gate threshold voltage ensured
- Rugged performance guaranteed
応用
- Sensor networks
- Health monitoring devices
- Data center applications
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
| Id - Continuous Drain Current | 2.8 A | Rds On - Drain-Source Resistance | 110 mOhms |
| Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 450 mV |
| Qg - Gate Charge | 14.5 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.25 W |
| Channel Mode | Enhancement | Series | P-Channel Polarity |
| Brand | Micro Commercial Components (MCC) | Configuration | Single |
| Forward Transconductance - Min | 8 S | Product Type | MOSFET |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 P-Channel | Unit Weight | 0.000282 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
SI2393DS-T1-GE3
P-Channel 30-V (D-S) MOSFET SOT-23 , 22.7 m @ 10V m @ 7.5V 33 m @ 4.5V
SI4126DY-T1-GE3
MOSFET N-CH 30V 39A 8-SOIC
SI2333DDS-T1-GE3
SOT-23 MOSFET designed for P Channel operation, featuring a 12V voltage rating and a resistance of 28mΩ at 4.5V for currents up to 6A
SI7157DP-T1-GE3
-20V Vds and 12V Vgs MOSFET suitable for power management tasks
SI2305DS-T1-E3
RoHS Compliant Package-3
SI2323DS-T1-GE3
Description: ROHS compliant SOT-23 MOSFETs capable of handling 4.7A current at 750mW power dissipation
SI4410BDY-T1-E3
Small-signal Silicon MOSFET SI4410BDY-T1-E3, featuring an N-channel design, rated for 7500 mA and 30 V
SI7905DN-T1-GE3
MOSFET SI7923DN-GE3 suggested as a substitute for SI7905DN-T1-GE3
BSC010NE2LSIATMA1
BSC010NE2LSIATMA1 MOSFET N-channel 25 volts 100 amps TDSON-8
SI1077X-T1-GE3
Si1077X Series 20 V 1.4 A 78 mOhm Surface Mount P-Channel Mosfet - SC89-6
2SD2150T100R
NPN-type bipolar transistors capable of handling up to 20V and 3A
MMBTA13LT1
NPN Darlington Transistor
SIA906EDJ-T1-GE3
Vishay SIA906EDJ-T1-GE3 N-channel MOSFET Transistor, 4.5 A, 20 V, 6-Pin SC-70
IXFB50N80Q2
MOSFET with 50 Amps and 800V
RTR030P02TL
Transistor MOSFET with 20V Voltage Rating
IRLI2910
IRLI2910 N-Channel MOSFET Transistor
MJW3281AG
The MJL Series TO-247 transistor is designed for high power applications
BTA16-800BW3G
3-Pin BTA16-800BW3G
IXFK44N50P
With a gate-source threshold voltage of 5V at 4mA
SD2931-12W
RF MOSFET Transistors RF PWR N-Ch MOS 150W 14dB 175MHz