• STD10P6F6 DPAK
STD10P6F6 DPAK

STD10P6F6

Trans MOSFET P-CH 60V 10A 3-Pin(2+Tab) DPAK T/R

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迅速な見積もり

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概要 STD10P6F6

The STD10P6F6 Power MOSFET from STMicroelectronics represents a significant leap forward in power semiconductor technology. Designed for optimal performance and durability, this device offers a unique combination of low RDS(on) and high power density, making it suitable for a wide range of industrial and automotive applications where efficiency and robustness are key considerations

STD10P6F6

主な特長

  • Ultra-low power consumption
  • Fast switching speed
  • Limited current rating

応用

SWITCHING

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Source Content uid STD10P6F6 Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Package Description DPAK-3/2
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 53 Weeks, 1 Day Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 80 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 60 V
Drain Current-Max (Abs) (ID) 10 A Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.116 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252 JESD-30 Code R-PSSO-G2
Number of Elements 1 Number of Terminals 2
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL Power Dissipation-Max (Abs) 35 W
Pulsed Drain Current-Max (IDM) 40 A Surface Mount NO
Terminal Form GULL WING Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON

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    部品の品質保証: 365 日

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