STD150N3LLH6
STripFET VI DeepGATE
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $1.024 | $1.02 |
| 200 | $0.397 | $79.40 |
| 500 | $0.383 | $191.50 |
| 1000 | $0.375 | $375.00 |
在庫：8,308
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : STD150N3LLH6
-
パッケージ/ケース : DPAK
-
Brand : ST
-
Components Classification : Single FETs, MOSFETs
-
日付シート : STD150N3LLH6 データシート (PDF)
-
Series : STD150N3LLH6
概要 STD150N3LLH6
N-Channel 30 V 80A (Tc) 110W (Tc) Surface Mount DPAK
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Source Content uid | STD150N3LLH6 | Part Life Cycle Code | Obsolete |
| Ihs Manufacturer | STMICROELECTRONICS | Part Package Code | TO-252 |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | Pin Count | 3 |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| Samacsys Manufacturer | STMicroelectronics | Avalanche Energy Rating (Eas) | 525 mJ |
| Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 30 V | Drain Current-Max (Abs) (ID) | 80 A |
| Drain Current-Max (ID) | 80 A | Drain-source On Resistance-Max | 0.0045 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-252 |
| JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 110 W | Pulsed Drain Current-Max (IDM) | 320 A |
| Qualification Status | Not Qualified | Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) - annealed | Terminal Form | GULL WING |
| Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
STD100N10F7
STD100N10F7 STMicroelectronics Transistors MOSFETs N-CH 100V 80A 3-Pin(2+Tab) DPAK T/R - Arrow.com
STF10N60M2
MOSFET with N-channel design, capable of handling 600V, with 0.56Ohm on-resistance and 7.5A current capacity using MDmesh M2 design
STF13NM60N
MOSFET N-CH 600V 11A MDMESH Power MDmesh
STF5N80K5
Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-220FP Tube
STGP3HF60HD
IGBT Transistors 4.5 A, 600 V very fast IGBT Ultrafast diode
STN3NF06L
N-MOSFET transistor with unipolar operation, 60V voltage rating, 4A current rating, and 3.3W power dissipation in SOT223 package
STP110N8F6
Trans MOSFET N-CH 80V 110A 3-Pin(3+Tab) TO-220AB Tube
STP140N6F7
0 Volt, 80 Amp Power Transistor
STP4NK60ZFP
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220FP Tube
STP75NF75
MOSFET N-Ch 75 Volt 80 Amp
ZXMN2F30FHTA
Small Signal Field-Effect Transistor, N-Channel, Silicon, Metal-oxide Semiconductor FET, 20V, 4.1A I(D)
BTB41-800BRG
TRIAC 800V 420A 3-Pin(3+Tab) TOP Tube
CM300DU-12NFH
Product code: CM300DU-12NFH
NDP6030
Manufacturer 2/02 MOSFET disc
BSC670N25NSFDATMA1
The BSC670N25NSFDATMA1 MOSFET has a power dissipation of 150W at 10V and a voltage drop of 4V at a current of 90uA
IRG4PC30U
600V Transistor Chip with N-type Channel
NX3008CBKS,115
Trans MOSFET N/P-CH 30V 0.35A/0.2A Automotive AEC-Q101 6-Pin TSSOP T/R
FDS3812
Small-outline integrated circuit (SOIC) package with 8 pins
SI7370DP-T1-E3
Product Description: MOSFET with a 60V Drain-Source Voltage and 20V Gate-Source Voltage in PowerPAK SO-8 Package
T2500DG
TO-220AB TRIACs adhering to ROHS standards