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STD16NF06LT4

STMICROELECTRONICS - STD16NF06LT4 - Power MOSFET, N Channel, 60 V, 24 A, 0.07 ohm, TO-252 (DPAK), Surface Mount

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概要 STD16NF06LT4

Engineers and designers can rely on the STD16NF06LT4 MOSFET for their high-current and high-power applications, thanks to its impressive specifications. With a continuous drain current rating of 24A and a low on resistance of 0.07ohm, this N-channel transistor offers excellent performance in demanding circuit configurations. The 60V drain-source voltage rating provides ample headroom for voltage spikes and variations in supply voltages. The 1V threshold voltage ensures precise control over the switching behavior, while the 10V Rds(on) test voltage facilitates accurate evaluation of the on-state resistance. The compact TO-252 package enhances the overall efficiency and thermal management of the STD16NF06LT4 MOSFET in a wide range of electronic designs

主な特長

  • N-Channel MOSFET
  • 70 mΩ @ 8A, 10V Rds-On-Max-Id-Vgs
  • 24A (Tc) Current-Continuous-Drain-Id-25°C
  • 18V Vgs-Gate-Source-Voltage
  • SMD/SMT Mounting-Style
  • 6 ns Fall-Time
  • Si Technology
  • -55°C Operating Temperature Range
  • Digi-ReelR Alternate Packaging

応用

SWITCHING

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Source Content uid STD16NF06LT4 Pbfree Code Yes
Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Part Package Code TO-252AA
Package Description SMALL OUTLINE, R-PSSO-G2 Pin Count 3
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 53 Weeks, 1 Day Samacsys Manufacturer STMicroelectronics
Additional Feature LOW THRESHOLD, LOGIC LEVEL COMPATIBLE Avalanche Energy Rating (Eas) 200 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V Drain Current-Max (Abs) (ID) 24 A
Drain Current-Max (ID) 24 A Drain-source On Resistance-Max 0.085 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 40 W Pulsed Drain Current-Max (IDM) 96 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed Terminal Form GULL WING
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON

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    部品の品質保証: 365 日

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