STF15NM65N
MOSFET N-Channel 650V Pwr Mosfet
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $1.404 | $1.40 |
10 | $1.263 | $12.63 |
30 | $1.173 | $35.19 |
100 | $1.083 | $108.30 |
500 | $1.041 | $520.50 |
1000 | $1.025 | $1,025.00 |
在庫:8,156
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : STF15NM65N
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パッケージ/ケース : TO-220FP
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ブランド : ST
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コンポーネントのカテゴリ : Single FETs, MOSFETs
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日付シート : STF15NM65N データシート (PDF)
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Series : STF15NM65N
概要 STF15NM65N
Designed for demanding power applications, the STF15NM65N Power Field-Effect Transistor provides a high voltage rating of 650V and a low on-resistance of 0.35 ohms typ. The N-Channel design and TO-220AB package make it easy to integrate into a variety of power electronics projects, offering reliable and efficient performance. Whether used in motor controls, power supplies, or voltage regulators, this MOSFET delivers the power and durability needed for critical applications
主な特長
- Robustness against overvoltage and noise
- Fast switching speed and high current handling
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Source Content uid | STF15NM65N | Part Life Cycle Code | Active |
Ihs Manufacturer | STMICROELECTRONICS | Part Package Code | TO-220AB |
Package Description | FLANGE MOUNT, R-PSFM-T3 | Pin Count | 3 |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 52 Weeks | Samacsys Manufacturer | STMicroelectronics |
Additional Feature | AVALANCHE RATED | Avalanche Energy Rating (Eas) | 187 mJ |
Case Connection | ISOLATED | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 650 V | Drain Current-Max (Abs) (ID) | 15.5 A |
Drain Current-Max (ID) | 12 A | Drain-source On Resistance-Max | 0.38 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-220AB |
JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 35 W | Pulsed Drain Current-Max (IDM) | 48 A |
Qualification Status | Not Qualified | Surface Mount | NO |
Terminal Finish | MATTE TIN | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Manufacturer | STMicroelectronics |
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | Through Hole |
Package / Case | TO-220-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 650 V |
Id - Continuous Drain Current | 15.5 A | Rds On - Drain-Source Resistance | 270 mOhms |
Vgs - Gate-Source Voltage | - 25 V, + 25 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 33.3 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 35 W |
Channel Mode | Enhancement | Tradename | MDmesh |
Series | STF15NM65N | Brand | STMicroelectronics |
Fall Time | 26 ns | Product Type | MOSFET |
Rise Time | 8 ns | Factory Pack Quantity | 1000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 80 ns | Typical Turn-On Delay Time | 25 ns |
Unit Weight | 0.068784 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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