STF19NM50N
Compact TO-P package with pin design for easy integration into electronic circuit
在庫:4,133
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
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部品番号 : STF19NM50N
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パッケージ/ケース : TO-220FP
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ブランド : ST
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コンポーネントのカテゴリ : Single FETs, MOSFETs
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日付シート : STF19NM50N データシート (PDF)
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Series : STF19NM50N
概要 STF19NM50N
As a pioneer in power MOSFET design, the STF19NM50N product series sets a new standard for efficiency and performance in the field of power electronics. Utilizing the latest MDmesh™ technology, these N-channel devices offer unmatched capabilities for high-efficiency converters and other demanding applications. The unique vertical structure and optimized strip layout of the MOSFETs result in exceptionally low on-resistance and gate charge, ensuring minimal power dissipation and maximum power output. With the STF19NM50N, engineers and designers can confidently tackle complex projects knowing they have a reliable and high-performance solution at their disposal
主な特長
- High surge withstand capability
- Low power consumption and standby mode
- Easy to handle and install
- Compact and reliable design
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Source Content uid | STF19NM50N | Part Life Cycle Code | Active |
Ihs Manufacturer | STMICROELECTRONICS | Part Package Code | TO-220AB |
Package Description | FLANGE MOUNT, R-PSFM-T3 | Pin Count | 3 |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 52 Weeks | Samacsys Manufacturer | STMicroelectronics |
Avalanche Energy Rating (Eas) | 208 mJ | Case Connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 500 V |
Drain Current-Max (Abs) (ID) | 14 A | Drain Current-Max (ID) | 14 A |
Drain-source On Resistance-Max | 0.25 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 30 W |
Pulsed Drain Current-Max (IDM) | 56 A | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Finish | MATTE TIN |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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