STF8N65M5
Trans MOSFET N-CH Si 650V 7A 3-Pin(3+Tab) TO-220FP Tube
在庫:3,997
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : STF8N65M5
-
パッケージ/ケース : TO-220FP
-
Brand : ST
-
Components Classification : Single FETs, MOSFETs
-
日付シート : STF8N65M5 データシート (PDF)
-
Series : STF8N65M5
概要 STF8N65M5
Featuring a voltage rating of 650V and a continuous drain current of 7A, the STF8N65M5 is a high power N-channel MOSFET suitable for a wide range of industrial and automotive applications. The device's low on-state resistance of 0.56 ohms ensures efficient power conversion and minimal power dissipation, making it ideal for use in high voltage power supplies and motor control applications. With its TO-220FP package and rugged construction, the STF8N65M5 offers easy mounting and superior thermal performance, ensuring reliable operation in demanding environments. Whether used in switch mode power supplies, motor drives, or other high voltage applications, the STF8N65M5 delivers the performance and efficiency required for critical power management tasks
主な特長
- Compact size and weight
- Easy installation
- Robust design
- Good thermal performance
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Source Content uid | STF8N65M5 | Part Life Cycle Code | Active |
Ihs Manufacturer | STMICROELECTRONICS | Part Package Code | TO-220AB |
Package Description | ROHS COMPLIANT, TO-220FP, 3 PIN | Pin Count | 3 |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 52 Weeks | Samacsys Manufacturer | STMicroelectronics |
Additional Feature | ULTRA-LOW RESISTANCE | Avalanche Energy Rating (Eas) | 120 mJ |
Case Connection | ISOLATED | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 650 V | Drain Current-Max (Abs) (ID) | 7 A |
Drain Current-Max (ID) | 7 A | Drain-source On Resistance-Max | 0.6 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-220AB |
JESD-30 Code | R-PSFM-T3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 25 W | Pulsed Drain Current-Max (IDM) | 28 A |
Qualification Status | Not Qualified | Surface Mount | NO |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![STD100N10F7](/files/uploads/product/s/STD100N10F7-22110026.webp)
STD100N10F7
STD100N10F7 STMicroelectronics Transistors MOSFETs N-CH 100V 80A 3-Pin(2+Tab) DPAK T/R - Arrow.com
![STF10N60M2](/files/uploads/product/s/9fd047b9-6a81-481c-16e8-08dbc6589f20.webp)
STF10N60M2
MOSFET with N-channel design, capable of handling 600V, with 0.56Ohm on-resistance and 7.5A current capacity using MDmesh M2 design
![STF13NM60N](/files/uploads/product/s/cc248b3e-018b-44bd-06cc-08dbbf1058dd.webp)
STF13NM60N
MOSFET N-CH 600V 11A MDMESH Power MDmesh
![STF5N80K5](/files/uploads/product/s/7d8dea4a-5975-4d76-2a59-08dbbf1058de.webp)
STF5N80K5
Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-220FP Tube
![STGP3HF60HD](/files/uploads/product/s/523b1edc-b5d7-4667-3a98-08dbc6589f1f.webp)
STGP3HF60HD
IGBT Transistors 4.5 A, 600 V very fast IGBT Ultrafast diode
![STN3NF06L](/files/uploads/product/s/005b9c8b-903b-4ad8-db77-08dbc6589f1f.webp)
STN3NF06L
N-MOSFET transistor with unipolar operation, 60V voltage rating, 4A current rating, and 3.3W power dissipation in SOT223 package
![STP110N8F6](/files/uploads/product/s/dfe66ac9-a653-4654-0e26-08dbc6589f1f.webp)
STP110N8F6
Trans MOSFET N-CH 80V 110A 3-Pin(3+Tab) TO-220AB Tube
![STP140N6F7](/files/uploads/product/s/5c9fbffb-d596-4572-0f11-08dbc6589f20.webp)
STP140N6F7
0 Volt, 80 Amp Power Transistor
![STP4NK60ZFP](/files/uploads/product/s/68784a25-56c9-4d99-09e7-08dbc6589f1f.webp)
STP4NK60ZFP
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220FP Tube
![STP75NF75](/files/uploads/product/s/0ae2c859-303a-483e-12b1-08dbc6589f1f.webp)
STP75NF75
MOSFET N-Ch 75 Volt 80 Amp
![ZXMN2F30FHTA](/img/package/sot23.jpg)
ZXMN2F30FHTA
Small Signal Field-Effect Transistor, N-Channel, Silicon, Metal-oxide Semiconductor FET, 20V, 4.1A I(D)
![PBSS2515E](/img/package/sot23.jpg)
PBSS2515E
PBSS2515E is an NPN Bipolar Transistor with a 0.5 A 15 V rating and an HFE of 90, designed for small signal applications
![BSM75GB170DN2](/img/product.png)
BSM75GB170DN2
High-current switching device for efficient power conversi
![IXTY26P10T](/img/package/dpak.jpg)
IXTY26P10T
Low on-resistance power transistor with a maximum drain-source voltage of -100V
![SPP20N60C3XKSA1](/img/package/to220.jpg)
SPP20N60C3XKSA1
MOSFET transistor capable of handling 650 volts and 20.7 amps in TO220-3 configuration
![FP30R06YE3](/img/package/module.jpg)
FP30R06YE3
Insulated Gate Bipolar Transistor FP30R06YE3 is a module-23 device with a maximum current rating of 37A and a breakdown voltage of 600V
![NTE186A](/img/package/to3.jpg)
NTE186A
Silicon NPN Transistor with 3A I(C) and 40V V(BR)CEO
![MPS2222AG](/img/package/to92.jpg)
MPS2222AG
33mm body height
![MRFE6VP6300HR5](/img/package/sot82.jpg)
MRFE6VP6300HR5
RF MOSFET Transistors VHV6 300W50VISM NI780H-4
![IRF2807STRLPBF](/img/package/d2pak3.jpg)
IRF2807STRLPBF
With a low on-resistance of 13mOhm, IRF2807STRLPBF offers efficient switching performance for high-current requirements up to 82A