STPSC40H12CWL

Positioned as a game-changer in the domain of power electronics, the STPSC40H12CWL SiC diode redefines excellence as an ultrahigh performance power Schottky rectifier. This diode, constructed using a silicon carbide substrate, leverages the advantages of wide band-gap material to craft a low VFSchottky diode structure with an impressive 1200 V rating. Thanks to its Schottky construction, this diode exhibits rapid turn-off characteristics devoid of any recovery phase, while maintaining minimal ringing patterns. Its capacitive turn-off behavior remains consistent across varying temperatures, offering stability and reliability without compromise. Tailored for demanding applications in PFC and secondary side functions, this ST SiC diode thrives in challenging hard switching scenarios, elevating system performance significantly. With a high forward surge capability, this rectifier excels in providing robustness during transient phases, ensuring a dependable and resilient operation that exceeds expectations

主な特長

• Rapid recovery time
• Low capacitance and inductance
• High-power handling capability