T435-700B-TR
4A Snubberless™ Triacs
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $0.502 | $0.50 |
10 | $0.418 | $4.18 |
30 | $0.381 | $11.43 |
100 | $0.336 | $33.60 |
500 | $0.316 | $158.00 |
1000 | $0.303 | $303.00 |
在庫:6,273
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : T435-700B-TR
-
パッケージ/ケース : TO252-2
-
Brand : Stmicroelectronics
-
Components Classification : TRIACs
-
日付シート : T435-700B-TR データシート (PDF)
-
Series : T435
概要 T435-700B-TR
Introducing the T435-700B-TR, a game-changer in the world of high-power RF transistors from STMicroelectronics. Tailored for broadband applications requiring exceptional performance, this transistor shines in radio frequency amplifiers for communication systems. With a frequency range spanning from 435 to 700 MHz, it caters to a diverse range of wireless communication systems with precision. Featuring a maximum power output of 22 watts and a gain of 13 dB, this transistor delivers superior performance in high-power applications. Its compact design and efficient packaging allow for easy integration into RF circuit designs, while its top-notch thermal stability ensures consistent operation even under high-power conditions. Designed for demanding environments such as military and aerospace applications, the T435-700B-TR prioritizes reliability and performance. Moreover, it's RoHS compliant, meeting stringent environmental standards regarding hazardous substances
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | Triacs | RoHS | Details |
Series | T435 | Non Repetitive On-State Current | 31 A |
Rated Repetitive Off-State Voltage VDRM | 700 V | Off-State Leakage Current @ VDRM IDRM | 5 uA |
On-State Voltage | 1.56 V | Holding Current Ih Max | 35 mA |
Gate Trigger Voltage - Vgt | 1.3 V | Gate Trigger Current - Igt | 35 mA |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 125 C |
Mounting Style | SMD/SMT | Package / Case | DPAK |
Brand | STMicroelectronics | Product Type | Triacs |
Factory Pack Quantity | 2500 | Subcategory | Thyristors |
Unit Weight | 0.009185 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![NZT44H8](/files/uploads/product/s/51b33199ad6b44468ed20144f37bf2a2.webp)
NZT44H8
BJT NPN Power Transistor
![STB60NF06T4](/files/uploads/product/s/e1011e646ae147788a62896a65d17c9b.webp)
STB60NF06T4
High-performance 60NF06T4 MOSFET for power applications
![NTD5865NLT4G](/files/uploads/product/s/1f030af0e83742d4b01a53d0ba842d48.webp)
NTD5865NLT4G
NTD5865NLT4G N-channel MOSFET Transistor
![NTD3055-094T4G](/files/uploads/product/s/8468b8e97dcd4913bf319ed17211d49d.webp)
NTD3055-094T4G
Crafted specifically for low-voltage, high-speed switching tasks in power supplies, converters, power motor controls, and bridge circuits
![NTD20P06LT4G](/files/uploads/product/s/36d452eea7b54a21b71f96ac8ac491c9.webp)
NTD20P06LT4G
Pack of 2500 NTD20P06LT4G Single P-Channel Power MOSFETs, featuring a -60V voltage rating, -15
![MJD3055T4G](/files/uploads/product/s/26c03a7d587644ee865266fba4b7a14f.webp)
MJD3055T4G
Transistor, General Purpose NPN Bipolar Junction, 60 Volts, 10 Amperes, 3-Pin with 2 Tabs, DPAK Package, Tape and Reel
![MJD44H11T4G](/files/uploads/product/s/1b854609343e47148bb0c6bcc525d4c4.webp)
MJD44H11T4G
MJD44H11T4G is an NPN bipolar transistor with a maximum voltage rating of 80V and a power dissipation of 1
![BULD742CT4](/img/package/dpak.jpg)
BULD742CT4
Bipolar transistors for high voltage fast switching applications NPN power transistor
![MAC4DSNT4G](/img/package/dpak2.jpg)
MAC4DSNT4G
This component is suitable for switching and regulating electrical currents
![MJB44H11T4-A](/img/package/d2pak.jpg)
MJB44H11T4-A
Trans GP BJT NPN 80V 10A 50000mW Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
![IPZ40N04S58R4ATMA1](/img/package/son8.jpg)
IPZ40N04S58R4ATMA1
Field-effect transistor suitable for amplifying signals in systems with voltages between 20V and 40V
![IRGP4750DPBF](/img/package/to247ac.jpg)
IRGP4750DPBF
IRGP4750DPBF: A high-performance N-channel IGBT chip designed for power applications
![ZXTP2027FTA](/img/package/sot23.jpg)
ZXTP2027FTA
Product ZXTP2027FTA is a general-purpose bipolar junction transistor (BJT) designed with a PNP configuration
![IRLL024ZPBF](/img/package/sot223.jpg)
IRLL024ZPBF
Power MOSFET featuring HEXFET technology, N-channel configuration, 55V Vds, 60mOhms on-state resistance, and 7nC gate charge
![IRFU3710ZPBF](/img/package/to251.jpg)
IRFU3710ZPBF
N-channel MOSFET for automotive applications
![T3050H-6T](/img/package/to220.jpg)
T3050H-6T
00v 284a to-220ab tube
![IRFY9140](/img/package/to257.jpg)
IRFY9140
Trans MOSFET P-CH 100V 15.8A 3-Pin(3+Tab) TO-257AA
![STB75NF75T4](/img/package/d2pak.jpg)
STB75NF75T4
Trans MOSFET N-CH 75V 80A 3-Pin(2+Tab) D2PAK T/R
![BTA06-600BRG](/img/package/to220.jpg)
BTA06-600BRG
TRIAC 600V 6A(RMS) 63A 3-Pin(3+Tab) TO-220AB Insulated Tube
![BC857BTT1G](/img/package/sc75.jpg)
BC857BTT1G
Small Signal Bipolar Transistor, 0.1A Collector Current, 45V Breakdown Voltage, PNP Type