IRLL024ZPBF
Power MOSFET featuring HEXFET technology, N-channel configuration, 55V Vds, 60mOhms on-state resistance, and 7nC gate charge
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $0.298 | $0.30 |
| 200 | $0.116 | $23.20 |
| 500 | $0.112 | $56.00 |
| 1000 | $0.110 | $110.00 |
在庫：5,633
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IRLL024ZPBF
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パッケージ/ケース : SOT-223-4
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ブランド : International Rectifier
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : IRLL024ZPBF データシート (PDF)
概要 IRLL024ZPBF
N-Channel 55 V 5A (Tc) 1W (Ta) Surface Mount SOT-223
主な特長
- Surface Mount
- Available in Tape and Reel
- Dynamic dV/dt Rating
- Logic-Level Gate Drive
- RDS(on) Specified at VGS = 4 V and 5 V
- Fast Switching
- Ease of Paralleling
- Lead (Pb)-free Available
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-223-4 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 55 V |
| Id - Continuous Drain Current | 5 A | Rds On - Drain-Source Resistance | 100 mOhms |
| Vgs - Gate-Source Voltage | - 16 V, + 16 V | Qg - Gate Charge | 7 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 2.8 W | Channel Mode | Enhancement |
| Brand | Infineon Technologies | Configuration | Single |
| Fall Time | 15 ns | Height | 1.6 mm |
| Length | 6.5 mm | Product Type | MOSFET |
| Rise Time | 33 ns | Factory Pack Quantity | 1760 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Type | Automotive MOSFET | Typical Turn-Off Delay Time | 20 ns |
| Typical Turn-On Delay Time | 8.6 ns | Width | 3.5 mm |
| Part # Aliases | SP001572992 | Unit Weight | 0.003951 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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