TJ30S06M3L(T6L1,NQ
The gate capacitance of this MOSFET is 3950pF
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部品番号 : TJ30S06M3L(T6L1,NQ
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パッケージ/ケース : DPAK-3
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Brand : Toshiba Semiconductor And Storage
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Components Classification : Single FETs, MOSFETs
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日付シート : TJ30S06M3L(T6L1,NQ データシート (PDF)
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Series : TJ30S06M3L
概要 TJ30S06M3L(T6L1,NQ
Ideal for power supplies, motor control systems, and lighting applications, this transistor can handle high current loads with ease. Its ability to operate efficiently across a wide temperature range further enhances its versatility and reliability in various environments
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | DPAK-3 (TO-252-3) | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 30 A | Rds On - Drain-Source Resistance | 21.8 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 10 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 80 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 68 W |
| Channel Mode | Enhancement | Qualification | AEC-Q101 |
| Tradename | U-MOSVI | Series | TJ30S06M3L |
| Brand | Toshiba | Configuration | Single |
| Height | 2.3 mm | Length | 6.5 mm |
| Product Type | MOSFET | Factory Pack Quantity | 2000 |
| Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
| Width | 5.5 mm | Unit Weight | 0.011640 oz |
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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