|
MJD112T4G
|
MJD112T4G is a NPN Complementary Darlington Power Transistor |
Onsemi |
9,720 |
|
|
NCV7805BDTRKG
|
Regulator for stabilizing voltage output to 5V with a maximum current of 1A |
Onsemi |
7,771 |
|
|
NJVNJD35N04T4G
|
350V NPN Darlington Transistors, 2000@2V, 2A, 4A 45W DPAK |
Onsemi |
8,531 |
|
|
NCV4274ADT50RKG
|
Low dropout voltage regulator with a positive 5V output, capable of delivering up to 0.4A of current in a DPAK package with 3 pins and 2 tabs |
Onsemi |
9,279 |
|
|
NJVMJD31CT4G
|
Transistor NPN 100V 3A for Automotive Applications |
Onsemi |
8,005 |
|
|
NTD25P03LT4G
|
P-Channel 30V 25A DPAK Trans MOSFET |
Onsemi |
5,500 |
|
|
MBRD835LT4G
|
35 Volts, 8.0 Amps |
Onsemi |
5,843 |
|
|
MBRD660CTRLG
|
6A 60V Schottky Diode Tape and Reel |
Onsemi |
8,319 |
|
|
MBRD640CTT4G
|
With a 40V voltage threshold and a current rating of 6A, the MBRD640CTT4G is a Schottky rectifier diode ideal for various applications |
Onsemi |
9,861 |
|
|
NCP1117DT33RKG
|
Positive voltage regulator |
Onsemi |
9,635 |
|
|
LM317MDT
|
This regulator comes in a 3-pin DPAK package with 2 tabs for easy mounting and integration |
Onsemi |
2,387 |
|
|
MC7805CDTRKG
|
Single Linear Voltage Regulator MC7805CDTRKG |
Onsemi |
8,336 |
|
|
MJD112G
|
100V collector-emitter breakdown voltage |
Onsemi |
5,349 |
|
|
MJD117G
|
3-Pin(2+Tab) DPAK Tube 100V 2A 1750mW PNP Darlington Trans |
Onsemi |
6,443 |
|
|
LM317MADTRKG
|
3-pin (2+Tab) standard regulator with a maximum output voltage of 37V and a minimum output voltage of 1.2V |
Onsemi |
5,778 |
|
|
RURD4120S9A-F085
|
These diodes offer versatile functionality |
Onsemi |
8,592 |
|
|
NJD35N04G
|
NPN Darlington Transistor with 350V, 2A rating |
Onsemi |
9,609 |
|
|
MJD44E3T4G
|
MJD44E3T4G is a robust NPN Darlington transistor designed for applications requiring high current amplification |
Onsemi |
9,253 |
|
|
MJD127G
|
The MJD127G is part of the MJD Series and is a PNP Darlington transistor intended for surface mount usage |
Onsemi |
7,126 |
|
|
ISL9V3040D3ST
|
The ISL9V3040D3ST chip is an insulated gate bipolar transistor (IGBT) module |
Onsemi |
5,064 |
|
|
MC78M09BDTG
|
Packaged in DPAK (TO-252) Single Gauge Tube, with 75 Units per Tube |
Onsemi |
6,728 |
|
|
MJD117T4
|
Trans Darlington PNP 100V 2A 20000mW 3-Pin(2+Tab) DPAK T/R |
Onsemi |
5,762 |
|
|
MC7815BDTRKG
|
58 decibels at 120 Hertz |
Onsemi |
9,198 |
|
|
MC7815BDTG
|
1 Amp Linear Voltage Regulator that produces positive voltage outputs within the range of 5 to 24 volts |
Onsemi |
7,930 |
|
|
NCV78M05BDTRKG
|
NCV78M05BDTRKG is a reliable regulator that operates within a temperature range of -40°C to +125°C, providing stable 5.0 V output voltage |
Onsemi |
9,473 |
|
|
MC79M05CDTG
|
Circuitry element |
Onsemi |
5,917 |
|
|
NJVMJD50T4G
|
The NJVMJD50T4G Bipolar Transistor is designed for applications requiring a voltage rating of 400V and power ratings of 1 |
Onsemi |
9,414 |
|
|
MJD42CT4G
|
Explore the capabilities of MJD42CT4G |
Onsemi |
5,013 |
|
|
NCV8405ADTRKG
|
Temperature and Current Limit Enabled |
Onsemi |
8,061 |
|
|
MC78M05BDTRKG
|
2500-Piece Reel of DPAK TO-252 Packaged Voltage Regulators |
Onsemi |
2,919 |
|
|
DN2625K4-G
|
Trans MOSFET N-CH Si 250V 1.1A 3-Pin(2+Tab) DPAK T/R |
Microchip Technology |
7,508 |
|
|
MCU20P10-TP
|
High-power semiconductor device |
Micro Commercial Co |
7,952 |
|
|
RD3G01BATTL1
|
RoHS adherence (Ships within one day) - Discontinued, year 2022" |
Rohm Semiconductor |
6,384 |
|
|
DMPH6050SK3-13
|
MOSFET Drain-Source Breakdown Voltage |
Diodes Incorporated |
7,685 |
|
|
DMP4047SK3-13
|
40V MOSFET with P-Channel and enhanced performance |
Diodes Incorporated |
8,872 |
|
|
RD3P130SPTL1
|
Pch Power MOSFET with a voltage rating of -100V and current rating of -13A |
Rohm Semiconductor |
5,462 |
|
|
STD5NM50
|
N-channel power MOSFET with a 500V rating and 7 |
Stmicroelectronics |
8,190 |
|
|
NTD3055L170G
|
75-Tube Packaging |
Onsemi |
9,866 |
|
|
MTD9N10E
|
Silicon power field-effect transistor with low on-resistance |
onsemi |
6,207 |
|
|
IRFR3412
|
IRFR3412: Power MOSFET for switching applications, featuring N-channel design, 100V voltage rating, and 48A current handling capability |
Infineon Technologies AG |
5,493 |
|
|
IPS0151S
|
D2PAK-3 Package Configuration |
Infineon Technologies |
6,464 |
|
|
DMN6068LK3-13
|
60V 6A 3-Pin Package |
Diodes Incorporated |
9,888 |
|
|
BUK7275-100A
|
Trans MOSFET N-CH 100V 21.7A Automotive 3-Pin(2+Tab) DPAK |
Nexperia Usa Inc. |
9,356 |
|
|
BUK9222-55A
|
Channel Metal-oxide Semiconductor Transistor |
Nexperia Usa Inc. |
9,897 |
|
|
20CWT10FN
|
Schottky Diode, 100V, 20A, DPAK Package |
Siliconix |
6,195 |
|
|
RD3P200SNFRATL
|
High-Power FET (RD3P200SNFRATL) |
Rohm Semiconductor |
7,265 |
|
|
IRGS14C40LPBF
|
International Rectifier IRGS14C40LPBF IGBT, 20 A 430 V, 3-Pin TO-263AB |
Infineon Technologies |
5,260 |
|
|
RD3L050SNFRATL
|
Low on-resistance |
Rohm Semiconductor |
8,920 |
|
|
NGTB05N60R2DT4G
|
NGTB05N60R2DT4G is a high-performance N-channel Insulated Gate Bipolar Transistor (IGBT) chip |
Onsemi |
9,682 |
|
|
IRG7S313UPBF
|
Power Transistor Chip with 78mW |
Infineon Technologies |
5,846 |
|
