MJD112T4G
MJD112T4G is a NPN Complementary Darlington Power Transistor
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $0.466 | $0.47 |
| 10 | $0.379 | $3.79 |
| 30 | $0.342 | $10.26 |
| 100 | $0.295 | $29.50 |
| 500 | $0.275 | $137.50 |
| 1000 | $0.263 | $263.00 |
在庫：9,720
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : MJD112T4G
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パッケージ/ケース : DPAK-3
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ブランド : Onsemi
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コンポーネントの分類 : Single Bipolar Transistors
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日付シート : MJD112T4G データシート (PDF)
概要 MJD112T4G
The MJD112T4G Darlington Bipolar Power Transistor is the go-to solution for high-power and switching needs in electronics design. Whether you're working on output stages, driver stages, switching regulators, converters, or power amplifiers, this transistor offers the performance and versatility required for a wide range of applications. Its NPN design complements the MJD117 (PNP) device, providing a seamless and efficient solution for your circuit design requirements. Trust the MJD112T4G to deliver reliable and consistent performance in your projects
主な特長
- Advanced Thermal Management for High-Temperature Operation
- High-Speed PCIe 4.0 Interface Support Enabled
- Fault-Tolerant Design with Triple Redundancy Built-In
- Low Power Consumption with High Performance Guaranteed
- Suitable for Data Center and Cloud Computing Applications
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Status | Active | Compliance | PbAHP |
| Package Type | DPAK-3 | Case Outline | 369C |
| MSL Type | 1 | MSL Temp (°C) | 260 |
| Container Type | REEL | Container Qty. | 2500 |
| ON Target | N | Polarity | NPN |
| IC Continuous (A) | 2 | V(BR)CEO Min (V) | 100 |
| VCE(sat) Max (V) | 2 | hFE Min (k) | 1 |
| hFE Max (k) | 12 | fT Min (MHz) | 25 |
| Pricing ($/Unit) | $0.2247 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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