|
UMB3NFHATN
|
Dual PNP Digital Transistor for Amplifier and Switching Applications - High-Speed, Low-Noise, High-Gai |
Rohm Semiconductor |
8,466 |
|
|
RN1907,LF(CT
|
High-performance digital NPN transistor for reliable power applications |
Toshiba Semiconductor and Storage |
8,090 |
|
|
RN1902,LF(CT
|
Integrated Bipolar Transistor Solution for Easy Circuit Desig |
Toshiba Semiconductor and Storage |
6,730 |
|
|
DMN67D8LDW-13
|
Advanced power management solution for high-reliability applications |
Diodes Incorporated |
7,757 |
|
|
DMN53D0LDW-13
|
High-power N-channel MOSFETs with high voltage and current handling capabilitie |
Diodes Incorporated |
7,488 |
|
|
DMN33D8LDW-7
|
Compact SMD package for space-saving designs |
Diodes Incorporated |
9,974 |
|
|
DMMT3904WQ-7-F
|
Automotive-grade NPN BJT with high voltage and current capabilities |
Diodes Incorporated |
9,459 |
|
|
DCX143ZU-7-F
|
Premium component designed for demanding circuit requirement |
Diodes Incorporated |
9,665 |
|
|
ADC124EUQ-13
|
Simplify your design process with our pre-biased bipolar transisto |
Diodes Incorporated |
7,367 |
|
|
ACX124EUQ-7R
|
AEC-Qqualified for use in harsh automotive environments |
Diodes Incorporated |
7,675 |
|
|
ACX114YUQ-13R
|
Reliable K ohm prebiasing solution for reduced design complexit |
Diodes Incorporated |
5,850 |
|
|
UMH33NTN
|
Bipolar Transistors - Pre-Biased TRANSISTOR |
Rohm Semiconductor |
9,142 |
|
|
NSS12200WT1G
|
Trans GP BJT PNP 12V 2A 650mW 6-Pin SC-88 T/R |
onsemi |
7,642 |
|
|
MGA-85563-TR1G
|
RF-Amplifier Amplifier RFIC GaAs, Low Noise |
Broadcom Limited |
4,677 |
|
|
UMH4NFHATN
|
Bipolar Transistors - BJT NPN+NPN Digital transistor (Corresponds to AEC-Q101) |
Rohm Semiconductor |
5,917 |
|
|
UMH3NFHATN
|
Bipolar Transistors - Pre-Biased NPN+NPN SOT-363 4.7kO Input Resist |
Rohm Semiconductor |
5,821 |
|
|
UMH2NFHATN
|
Bipolar Transistors - Pre-Biased NPN+NPN Digital transistor (Corresponds to AEC-Q101) |
Rohm Semiconductor |
8,011 |
|
|
UMH10NFHATN
|
Bipolar Transistors - Pre-Biased NPN+NPN Digital transistor (Corresponds to AEC-Q101) |
Rohm Semiconductor |
8,402 |
|
|
UMB4NFHATN
|
Bipolar Transistors - Pre-Biased PNP+PNP SOT-363 10kO Input Resist |
Rohm Semiconductor |
9,226 |
|
|
UMB2NFHATN
|
Bipolar Transistors - Pre-Biased PNP+PNP SOT-363 -50V VCC -0.1A IC |
Rohm Semiconductor |
7,482 |
|
|
UMB11NFHATN
|
Bipolar Transistors - Pre-Biased PNP+PNP Digital transistor (Corresponds to AEC-Q101) |
Rohm Semiconductor |
9,205 |
|
|
UMB10NFHATN
|
Trans Digital BJT PNP 50V 100mA 150mW Automotive AEC-Q101 6-Pin UMT T/R |
Rohm Semiconductor |
7,384 |
|
|
MUN5213DW1T3G
|
Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R |
onsemi |
5,722 |
|
|
MUN5237DW1T1G
|
Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R |
onsemi |
9,721 |
|
|
MUN5234DW1T1G
|
Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R |
onsemi |
8,921 |
|
|
QPA4263ATR7
|
Introducing the versatile QPA4263ATR7 RF Amplifier with a low noise figure of 3.7dB |
Qorvo |
7,105 |
|
|
QPA0363ATR7
|
Get superior signal amplification with this RF amplifier |
Qorvo |
2,055 |
|
|
QPA0163LTR7
|
Ideal amplifier solution for frequencies 100MHz to 1300MHz |
Qorvo |
7,616 |
|
|
QPA4563ASR
|
High performance RF amplifier for wide frequency range |
Qorvo |
3,519 |
|
|
BAS70DW-06-7-F
|
6-Pin SOT-363 package type |
Diodes Incorporated |
6,299 |
|
|
SSM6L35FU(TE85L,F)
|
N-channel Small Signal MOSFET, capable of handling currents from -0 |
Toshiba |
5,354 |
|
|
BAS16HTWQ-13
|
Diode Small Signal Switching 100V 0.2A 6-Pin SOT-363 T/R Automotive AEC-Q101 |
Diodes Incorporated |
5,733 |
|
|
MGA-87563-BLKG
|
RF Amplifier 3 SV 12.5 dB |
Broadcom Limited |
3,710 |
|
|
BC857BS-13-F
|
Bipolar Transistors - BJT PNP Small SIG -50V -45V VCEO 6.0V VEBO |
Diodes Incorporated |
6,012 |
|
|
VESD05A5-06GHG3-08
|
ESD Protection Diode Arrays |
Vishay General Semiconductor - Diodes Division |
9,029 |
|
|
SBC847BDW1T3G
|
Trans GP BJT NPN 45V 0.1A 380mW Automotive AEC-Q101 6-Pin SC-88 T/R |
onsemi |
6,907 |
|
|
SBC856BDW1T3G
|
Trans GP BJT PNP 65V 0.1A 380mW Automotive AEC-Q101 6-Pin SC-88 T/R |
onsemi |
8,096 |
|
|
BC856AS-7
|
Bipolar Transistors - BJT 100mA 65V |
Diodes Incorporated |
8,261 |
|
|
DCX143TU-7-F
|
Trans Digital BJT NPN/PNP 50V 100mA 200mW 6-Pin SOT-363 T/R |
Diodes Incorporated |
9,091 |
|
|
DDA114EU-7-F
|
Trans Digital BJT PNP 50V 100mA 200mW 6-Pin SOT-363 T/R |
Diodes Incorporated |
6,880 |
|
|
DDA114TU-7-F
|
Trans Digital BJT PNP 50V 100mA 200mW 6-Pin SOT-363 T/R |
Diodes Incorporated |
5,718 |
|
|
MMBZ5229BS-7-F
|
Zener Diode Dual Anti Parallel 4.3V 5% 22Ohm 200mW 6-Pin SOT-363 T/R |
Diodes Incorporated |
6,633 |
|
|
MMBZ5233BS-7-F
|
Zener Diode Dual Anti Parallel 6V 5% 7Ohm 200mW 6-Pin SOT-363 T/R |
Diodes Incorporated |
5,700 |
|
|
MMBZ5235BS-7-F
|
Zener Diodes 6.8V 200mW |
Diodes Incorporated |
7,696 |
|
|
MMBZ5239BS-7-F
|
Zener Diodes 200MW 9.1V |
Diodes Incorporated |
9,882 |
|
|
MMBZ5240BTS-7-F
|
Zener Diodes 200MW 10V |
Diodes Incorporated |
6,285 |
|
|
MMBZ5242BS-7-F
|
Zener Diodes 12V 200mW |
Diodes Incorporated |
5,942 |
|
|
DMB53D0UDW-7
|
N-Channel Enhancement Mode MOSFET Plus PNP Transistor 6-Pin SOT-363 T/R |
Diodes Incorporated |
9,136 |
|
|
RN1904,LF(CT
|
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor |
Toshiba Semiconductor and Storage |
6,999 |
|
|
DMN63D8LDW-13
|
Trans MOSFET N-CH 30V 0.26A 6-Pin SOT-363 T/R |
Diodes Incorporated |
6,511 |
|
