|
DCX115EU-7-F
|
Precise control of current and voltage in DC circuit |
Diodes Incorporated |
5,070 |
|
|
DDA123JU-7-F
|
High-performance PNP transistor for reliable switching applications |
Diodes Incorporated |
8,014 |
|
|
DDA124EU-7-F
|
Bipolar Transistors - Pre-Biased 200MW 22K 22K |
Diodes Incorporated |
9,535 |
|
|
DDC113TU-7-F
|
High-speed switching and amplification with these pre-biased transistors, offering reliability and efficienc |
Diodes Incorporated |
6,253 |
|
|
DMMT3906-TP
|
Trans GP BJT PNP 40V 0.2A 200mW 6-Pin SOT-363 T/R |
Micro Commercial Co |
5,300 |
|
|
DMN2004DWKQ-7
|
High-performance N-MOSFET transistor with V and A capabilities |
Diodes Incorporated |
8,868 |
|
|
DSS8110Y-7
|
Trans GP BJT NPN 100V 1A 625mW 6-Pin SOT-363 T/R |
Diodes Incorporated |
7,490 |
|
|
MMDT3904Q-7-F
|
Low-power consumption and high efficiency for car electronic |
Diodes Incorporated |
8,214 |
|
|
MMDT4403-TP
|
Wide voltage range for flexible circuit desi |
Micro Commercial Co |
6,549 |
|
|
NXB0101GW-Q100H
|
NXB0101GW-Q100H Translation Voltage Levels |
Nexperia |
4,281 |
|
|
PMP5201Y-QX
|
Bipolar Transistors - BJT PMP5201Y-Q |
Nexperia USA Inc. |
8,688 |
|
|
QPA0363ASR
|
Improve your communication systems with our high-quality RF amplifier |
Qorvo |
6,326 |
|
|
RN2904,LF(CT
|
Pre-biased and pre-tested for reliable operation in harsh environments |
Toshiba Semiconductor and Storage |
9,780 |
|
|
RN4984,LF(CT
|
Compact automotive-grade transistor for reliable high-speed application |
Toshiba Semiconductor and Storage |
5,662 |
|
|
RN49A2,LF(CT
|
Bipolar Transistors - Pre-Biased Bias Resistor Built- in Transistor, 2in1 |
Toshiba Semiconductor and Storage |
5,802 |
|
|
SBC847CDW1T1G
|
Trans GP BJT NPN 45V 0.1A 380mW Automotive AEC-Q101 6-Pin SC-88 T/R |
onsemi |
7,784 |
|
|
SI1480BDH-T1-GE3
|
High-voltage MOSFET for demanding power applications up to |
Vishay Siliconix |
7,730 |
|
|
SQ1440EH-T1_GE3
|
MOSFET 60V Vds +/-20V Vgs AEC-Q101 Qualified |
Vishay Siliconix |
8,233 |
|
|
SQ1464EEH-T1_GE3
|
Precise voltage control module for reliable power delivery |
Vishay Siliconix |
8,600 |
|
|
SSM6P35AFU,LF
|
Innovative technology for precise control of electrical current fl |
Toshiba Semiconductor and Storage |
8,475 |
|
|
TC7SB3157CFU,LF(CT
|
Compact and reliable bus switch with low power consumptio |
Toshiba Semiconductor and Storage |
8,605 |
|
|
XS5A1T4157GWH
|
7.7Ω 1 SPDT TSSOP-6 Analog Switches/Multiplexers, ROHS Certified |
Nexperia |
3,709 |
|
|
SSM6N35AFU,LF
|
MOSFET LowON Res MOSFET ID=.25A VDSS=20V |
Toshiba Semiconductor and Storage |
9,822 |
|
|
NXS0101GWH
|
Open Drain Voltage Level Shifter SC-88 6-Pin T/R - Tape and Reel |
Nexperia |
4,186 |
|
|
DSL12AW-7
|
Trans GP BJT PNP 12V 2A 650mW 6-Pin SOT-363 T/R |
Diodes Incorporated |
9,596 |
|
|
BCM846SH6327XTSA1
|
Trans GP BJT NPN 65V 0.1A 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R |
Infineon Technologies |
9,335 |
|
|
QPA2363CSR
|
Enhance your signal quality with this versatile RF amplifier for a wide range of applications |
Qorvo |
5,071 |
|
|
SI1441EDH-T1-BE3
|
Reliable 20V MOSFET for heavy-duty applications requiring minimal gate drive |
Vishay Siliconix |
7,110 |
|
|
DRDP006W-7
|
High-reliability PNP transistor for general-purpose applications, suitable for automotive and industrial us |
Diodes Incorporated |
5,031 |
|
|
PJT7802_R1_00001
|
MOSFET 20V N-Channel Enhancement Mode MOSFETESD Protected |
Panjit International Inc. |
5,964 |
|
|
SSM6N37FU,LF
|
High-voltage device for power management applicatio |
Toshiba Semiconductor and Storage |
6,586 |
|
|
DDC115EU-7-F
|
Trans Digital BJT NPN 50V 100mA 200mW 6-Pin SOT-363 T/R |
Diodes Incorporated |
9,061 |
|
|
PE4105C3C6_R1_00001
|
ESD Suppressors / TVS Diodes 5V ESD Protection UNI |
Panjit International Inc. |
8,896 |
|
|
RN4901,LF(CT
|
Compact pin package suitable for various electronic designs |
Toshiba Semiconductor and Storage |
5,988 |
|
|
MMDT2222A-TP
|
Trans GP BJT NPN 40V 0.6A 150mW 6-Pin SOT-363 T/R |
Micro Commercial Co |
6,920 |
|
|
UMB3NTN
|
Bipolar Transistors - Pre-Biased DUAL PNP 50V 100MA |
Rohm Semiconductor |
6,602 |
|
|
MMDT2227Q-7-F
|
Compact design enables efficient thermal dissipation in harsh environment |
Diodes Incorporated |
6,531 |
|
|
SGA-4563Z
|
RF Amplifier with 20.2dB SSG and 2.4dB NF up to 2.5GHz |
Qorvo |
5,062 |
|
|
SGA-3563Z
|
The SGA3563Z is a wide band low power amplifier capable of operating from 0MHz to 5000MHz |
Qorvo |
7,941 |
|
|
SGA-4363Z
|
Compact and Efficient SSG Solution for NF < 14.8dB |
Qorvo |
5,851 |
|
|
ZXCT212BDW-7
|
Tape and reel packaging |
Diodes Incorporated |
2,823 |
|
|
ZXCT210QCDW-7
|
Available in Tape and Reel packaging for convenient assembly |
Diodes Incorporated |
2,260 |
|
|
ZXCT214QBDW-7
|
Voltage Output Current and Power Monitor/Regulator ZXCT214QBDW-7: SOT363 Package, Tape & Reel, 3K Quantity |
Diodes Incorporated |
4,120 |
|
|
MCH6436-TL-W
|
Trans MOSFET N-CH 30V 6A 6-Pin MCPH T/R |
onsemi |
8,148 |
|
|
SI1902CDL-T1-BE3
|
Compact SC--package ideal for space-constrained desig |
Vishay Siliconix |
9,931 |
|
|
SI1424EDH-T1-BE3
|
Advanced N-channel transistor solution for V application |
Vishay Siliconix |
5,706 |
|
|
SI1427EDH-T1-BE3
|
Compact SOT-363 package ideal for space-constrained designs |
Vishay Siliconix |
9,710 |
|
|
MUN5311DW1T2G
|
Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R |
onsemi |
7,757 |
|
|
SMUN5131DW1T1G
|
Trans Digital BJT PNP 50V 100mA 385mW Automotive AEC-Q101 6-Pin SC-88 T/R |
onsemi |
8,758 |
|
|
NSVT45010MW6T1G
|
Trans GP BJT PNP 45V 0.1A 380mW Automotive AEC-Q101 6-Pin SC-88 T/R |
onsemi |
7,927 |
|
