|
BSS316NH6327XTSA1
|
N-Channel MOSFET with 30V voltage and 1.4A current in SOT-23-3 package |
Infineon Technologies |
8,070 |
|
|
BSS670S2LH6327XTSA1
|
This is a MOSFET with an N-type channel, designed for a maximum voltage of 55 volts and a current of 540 milliamps, enclosed in an SOT-23-3 package |
Infineon Technologies |
7,321 |
|
|
BZX84-A6V2,215
|
Diode Zener Single 6.2V 1% 250mW 3-Pin SOT-23 T/R |
Nexperia USA Inc. |
8,977 |
|
|
BZX84-B18,215
|
Diode Zener Single 18V 2% 250mW 3-Pin SOT-23 T/R |
Nexperia USA Inc. |
7,206 |
|
|
BZX84-B4V7,215
|
Zener Diodes with BZX84-B4V7,215 Model |
Nexperia USA Inc. |
5,647 |
|
|
BZX84-C10,215
|
Diode Zener Single 10V 5% 250mW 3-Pin SOT-23 T/R |
NXP USA Inc. |
6,002 |
|
|
BZX84-C12,235
|
Diode Zener Single 12V 5% 250mW 3-Pin SOT-23 T/R |
Nexperia USA Inc. |
8,315 |
|
|
BZX84-B6V2,215
|
6.2V Zener Diodes 250mW |
Nexperia USA Inc. |
5,251 |
|
|
BZX84-C20,215
|
Diode Zener Single 20V 5% 250mW 3-Pin SOT-23 T/R |
Nexperia USA Inc. |
8,003 |
|
|
BZX84-C33,215
|
Voltage regulator diodes description BZX84-C33,215 |
NXP Semiconductors |
9,730 |
|
|
BZX84C2V4LT1G
|
2.4V Zener Diode Single 5% 100Ohm 300mW 3-Pin SOT-23 T/R |
onsemi |
6,667 |
|
|
BZX84C24LT1G
|
Zener Diode Single 24V 5% 70Ohm 300mW 3-Pin SOT-23 T/R |
onsemi |
9,267 |
|
|
BZX84C3V9-7-F
|
3.9V, 0.35W voltage regulator diode BZX84C3V9-7-F: This silicon-based device effectively controls voltage flow in a single direction |
Diodes Incorporated |
8,241 |
|
|
CDSOT23-S2004
|
ESD Suppressors / TVS Diodes designed for 240 volts switching diode |
Bourns Inc. |
7,454 |
|
|
CPH3459-TL-W
|
N-Channel MosFET |
onsemi |
6,976 |
|
|
DAN212KT146
|
Power diodes suitable for various general-purpose and switching functions, featuring a maximum voltage of 80V and a current of 100mA |
Rohm Semiconductor |
8,641 |
|
|
DCC010-TB-E
|
Small signal switching rectifier diode with a 85V 0.3A rating and 4ns response time |
onsemi |
6,338 |
|
|
DD3X062J0L
|
Diode for Surge Protection, Zener Type, 6.5V, 200mW |
Panasonic Electronic Components |
6,533 |
|
|
DDTC114ECA-7-F
|
Diodes Inc. DDTC114ECA-7-F |
Diodes Incorporated |
7,733 |
|
|
DDTD113ZC-7-F
|
Diodes Inc, DDTD113ZC-7-F NPN Digital Transistor, 500 mA 1 kΩ, Ratio Of 0.1, 3-Pin SOT-23 |
Diodes Incorporated |
5,717 |
|
|
DDZX12C-7
|
Zener diodes rated for 300 milliwatts and 12 volts, featuring low forward voltage characteristics |
Diodes Incorporated |
7,073 |
|
|
DDZX18C-7
|
Single Diode Zener with 17.88V Voltage |
Diodes Incorporated |
5,053 |
|
|
DMG3418L-7
|
The DMG3418L-7 from Diodes Inc is a high-performance N-channel MOSFET transistor designed for low voltage applications |
Diodes Incorporated |
9,013 |
|
|
DMN1019USN-13
|
Enhancement Mode N-Channel MOSFET with 12V |
Diodes Incorporated |
7,232 |
|
|
DMN2046U-7
|
Small SOT-23-3 package, compliant with RoHS regulations |
Diodes Incorporated |
7,988 |
|
|
DMN3053L-7
|
DMN3053L-7: Power MOSFET with 30V Drain-source Voltage, N-channel Enhancement Mode, 12V Gate-source Voltage, 0 |
Diodes Incorporated |
5,110 |
|
|
DMN61D9U-7
|
Transistor with a polarity of N Channel and a Vds rating of 60V |
Diodes Incorporated |
8,359 |
|
|
DMP3099L-13
|
P-channel 30V 3.8A SOT-23 MOSFET |
Diodes Incorporated |
6,774 |
|
|
DN350T05-7
|
High Voltage NPN Bipolar Transistor |
Diodes Incorporated |
8,118 |
|
|
DSS5240T-7
|
DSS5240T-7: Bipolar junction transistors configured as PNP, designed for 40V operation with a maximum current rating of 2A |
Diodes Incorporated |
6,397 |
|
|
DTA124EKAT146
|
Product code DTA124EKAT146 denotes a digital transistor configured as a pre-biased PNP variant |
Rohm Semiconductor |
7,255 |
|
|
DTA143ZKAT146
|
Small signal PNP silicon transistor with a maximum collector current of 0 |
Rohm Semiconductor |
9,797 |
|
|
DTB113ZKT146
|
With a 50 V voltage rating and a 500 mA current rating, the DTB113ZKT146 is suitable for a variety of surface mount applications |
Rohm Semiconductor |
8,154 |
|
|
DTC114YKAT146
|
14yka rl digital npn transistor array |
Rohm Semiconductor |
9,670 |
|
|
DTC114TKAT146
|
Bipolar transistors with pre-biased DIGIT NPN configuration, rated for 50V and 100mA |
Rohm Semiconductor |
9,324 |
|
|
DTC123JKAT146
|
SMT T/R Trans Digital BJT NPN 50V 100mA 3-Pin |
Rohm Semiconductor |
5,318 |
|
|
DTC124EKAT146
|
Product DTC124EKAT146 - 56 at 5mA, 5V 1 NPN - Pre Biased 200mW |
Rohm Semiconductor |
8,310 |
|
|
DTD113EKT146
|
NPN Digital Transistors for 50V and 500mA |
Rohm Semiconductor |
9,814 |
|
|
DTD113ZKT146
|
3-Pin Transistor for Digital Applications |
Rohm Semiconductor |
7,180 |
|
|
ESD24VS2UE6327HTSA1
|
Unidirectional TVS Diode SOT23 32V 230W |
Infineon Technologies |
9,471 |
|
|
FDN361BN
|
Trans MOSFET N-CH 30V 1.4A 3-Pin SOT-23 T/R |
onsemi |
5,635 |
|
|
FDN359AN
|
7A N-Channel 30V SOT-23 Transistor |
onsemi |
8,328 |
|
|
FDN86265P
|
Trans MOSFET P-CH Si 150V 0.8A 3-Pin SOT-23 T/R |
onsemi |
9,295 |
|
|
FMMD914TA
|
Diodes for various applications, including power and switching |
Diodes Incorporated |
6,049 |
|
|
FMMT3904TA
|
Featuring NPN polarity and constructed from Silicon, the FMMT3904TA is a small signal bipolar transistor capable of carrying up to 0 |
Diodes Incorporated |
6,287 |
|
|
FMMT38C
|
High power amplification transistors |
Diodes Incorporated |
9,562 |
|
|
IMBD4148-V-GS08
|
0.15 A Silicon Signal Diode IMBD4148-V-GS08 |
Vishay General Semiconductor - Diodes Division |
8,178 |
|
|
IRLML6302GTRPBF
|
SOT-23 package, Tape and Reeled packaging |
Infineon Technologies |
5,125 |
|
|
ISL21010CFH315Z-T7A
|
Ideal for Low Power Applications |
Renesas Electronics Corporation |
9,813 |
|
|
ISL21080DIH309Z-TK
|
Ideal for low-power applications and IoT devices |
Renesas Electronics Corporation |
5,357 |
|
