|
S-5743NBH1A-M3T4U
|
High Accuracy: 'Precise measurement guaranteed with advanced sensing technology |
ABLIC Inc. |
9,114 |
|
|
S-57M1NBH1B-M3T1U
|
Board Mount Hall Effect / Magnetic Sensors Hall Sensor |
ABLIC Inc. |
9,924 |
|
|
SBR160S23-7
|
60V 1.6A Super Barrier Rectifier Diode |
Diodes Incorporated |
9,538 |
|
|
SI2302CDS-T1-BE3
|
MOSFET N-CHANNEL 20-V (D-S) |
Vishay Siliconix |
5,062 |
|
|
SI2318DS-T1-BE3
|
N-channel power surface mount transistor with 0.045 Ohm resistance at 40 volts |
Vishay Siliconix |
9,298 |
|
|
SI2314EDS-T1-E3
|
3-Pin SOT-23 N-Channel MOSFET |
Vishay Siliconix |
5,912 |
|
|
SI2318CDS-T1-BE3
|
SOT-23 (TO-236) package: Compact packaging suitable for space-constrained applications |
Vishay Siliconix |
5,597 |
|
|
SI2319DS-T1-BE3
|
The SI2319DS-T1-BE3 MOSFET features a low on-resistance of 82mΩ at 3A and exhibits excellent performance even at lower voltages |
Vishay Siliconix |
5,988 |
|
|
SI2367DS-T1-GE3
|
Vishay SI2367DS-T1-GE3 P-channel MOSFET Transistor, 2.2 A, -20 V, 3-Pin TO-236 |
Vishay Siliconix |
7,104 |
|
|
SI2369BDS-T1-GE3
|
-30V P-Channel MOSFET |
Vishay Siliconix |
6,830 |
|
|
SI2387DS-T1-GE3
|
Trans MOSFET P-CH 80V 2.1A 3-Pin SOT-23 T/R |
Vishay Siliconix |
6,502 |
|
|
SI2377EDS-T1-GE3
|
Trans MOSFET P-CH 20V 4.4A 3-Pin SOT-23 T/R |
Vishay Siliconix |
9,265 |
|
|
SLVU2.8HTG
|
Uni-Dir ESD Suppressor TVS 2.8V 3-Pin SOT-23 T/R |
Littelfuse Inc. |
5,405 |
|
|
SMBT2222AE6327HTSA1
|
High Temperature Automotive Grade Transistor |
Infineon Technologies |
7,342 |
|
|
SMP1307-004LF
|
Product SMP1307-004LF is a pin diode with a voltage breakdown rating of 200V, made of silicon material in a green plastic package |
Skyworks Solutions Inc. |
9,796 |
|
|
SN7002NH6327XTSA2
|
Product SN7002NH6327XTSA2 is characterized by a MOSFET setup enclosed in an SOT-23 package |
Infineon Technologies |
9,729 |
|
|
SQ2308CES-T1_GE3
|
High Quality N-Channel MOSFET for Automotive Systems |
Vishay Siliconix |
6,442 |
|
|
SQ2361EES-T1-GE3
|
MOSFET for Automotive Applications: P-Channel, 60V (D-S), 175°C |
Vishay |
9,295 |
|
|
SST3904T116
|
40V Breakdown Voltage |
Rohm Semiconductor |
7,576 |
|
|
STM1061N27WX6F
|
Processor Supervisor 2.7V 1 Active Low/Open Drain 3-Pin SOT-23 T/R |
STMicroelectronics |
5,682 |
|
|
STM1816TWX7F
|
Processor Supervisor 3.06V 1 Active Low/Open Drain 3-Pin SOT-23 T/R |
STMicroelectronics |
5,902 |
|
|
STR2P3LLH6
|
Trans MOSFET P-CH 30V 2A 3-Pin SOT-23 T/R |
STMicroelectronics |
7,902 |
|
|
STZC6.8NT146
|
Diode Zener Dual Common Anode 6.8V 5% 200mW Automotive 3-Pin SMD T/R |
Rohm Semiconductor |
7,969 |
|
|
STZ6.2NT146
|
STZ6.2NT146 Zener Diode Specification: 6.1V, 4.8%, 0.2W, Silicon |
Rohm Semiconductor |
8,321 |
|
|
SZBZX84B5V1LT1G
|
Diode Zener Single 5.1V 2% 300mW Automotive AEC-Q101 3-Pin SOT-23 T/R |
onsemi |
7,940 |
|
|
SZBZX84C15ET1G
|
Diode Zener Single 15V 6% 300mW Automotive AEC-Q101 3-Pin SOT-23 T/R |
onsemi |
9,428 |
|
|
SZBZX84C5V1LT1G
|
Diode Zener Single 5.1V 5% 300mW Automotive AEC-Q101 3-Pin SOT-23 T/R |
onsemi |
5,211 |
|
|
SZNUP3105LT3G
|
ESD Suppressor TVS Bi-Dir 32V Automotive AEC-Q101 3-Pin SOT-23 T/R |
onsemi |
6,806 |
|
|
TL431AMFDT,215
|
V-Ref Adjustable 2.495V to 36V 100mA Automotive AEC-Q100 3-Pin SOT-23 T/R |
NXP Semiconductors |
5,963 |
|
|
TL431BMFDT,215
|
V-Ref Adjustable 2.495V to 36V 100mA Automotive AEC-Q100 3-Pin SOT-23 T/R |
Nexperia USA Inc. |
5,090 |
|
|
TL431BQDBZR,215
|
V-Ref Adjustable 2.495V to 36V 100mA Automotive 3-Pin SOT-23 T/R |
Nexperia USA Inc. |
5,802 |
|
|
TLE4913HTSA1
|
Compact board mount IC featuring Hall effect sensor technology for reliable magnetic detection and switching |
Infineon Technologies |
8,999 |
|
|
TLE49681MXTSA1
|
Detect subtle changes in magnetic fields with this highly sensitive and accurate board-mount sensor |
Infineon Technologies |
8,458 |
|
|
TLI49611MXTSA1
|
Latch-Type Hall Effect Sensor - 25mA Output, Supports 3.3V/5V/9V/12V/15V/18V/24V, SOT-23 Package, Tape and Reel |
Infineon Technologies |
6,211 |
|
|
TS3431CILT
|
V-Ref Adjustable 1.24V to 24V 100mA 3-Pin SOT-23 T/R |
STMicroelectronics |
5,143 |
|
|
ZXMN3F30FHTA
|
SOT-23 3-Pin Trans MOSFET N-CH 30V 4.6A Tape and Reel |
Diodes Incorporated |
7,724 |
|
|
ZXTN2018FTA
|
High-performance NPN transistor |
Diodes Incorporated |
6,749 |
|
|
ZXTN23015CFHTA
|
BJT NPN transistors designed for medium power usage |
Diodes Incorporated |
5,369 |
|
|
ZXTN4240F-7
|
TRANS NPN 40V 2A |
Diodes Incorporated |
5,099 |
|
|
ZXTP25020CFH
|
Trans GP BJT PNP 20V 4A 1810mW 3-Pin SOT-23 |
Diodes Incorporated |
6,691 |
|
|
ZXTP25040DFH
|
Transistor with medium power capability |
Diodes Incorporated |
6,783 |
|
|
ZXTP25060BFH
|
Product ZXTP25060BFH is a Bipolar Transistor with a PNP configuration, capable of handling up to 60 volts and 3 amps in a SOT23-3 package |
Diodes Incorporated |
9,597 |
|
|
ZXTP25100BFH
|
Trans GP BJT PNP 100V 2A 1810mW 3-Pin SOT-23 |
Diodes Incorporated |
6,897 |
|
|
2STR2215
|
Silicon PNP transistor with 1500mA, 15V rating in plastic package-3 |
STMicroelectronics |
8,091 |
|
|
2STR2160
|
Fast-switching PNP power transistor with low voltage rating |
STMicroelectronics |
5,225 |
|
|
2STR1230
|
00mW Small Signal Transistor |
STMicroelectronics |
6,190 |
|
|
2SK3666-3-TB-E
|
N-channel Junction Field-Effect Transistor (JFET) with a voltage rating of 30V and a maximum current of 10mA in a 3-pin SC-59 package |
onsemi |
7,843 |
|
|
2SK209-BL(TE85L,F)
|
Transistor: N-JFET; unipolar; 14mA; 150mW; SC59; Igt:10mA |
Toshiba Semiconductor and Storage |
6,768 |
|
|
2SK1581-T1B-A
|
Null SC-59 2SK1581-T1B-A MOSFET boasting a threshold voltage of 1.6V at 10uA, ROHS compliance, and a power handling capacity of 200mW at 4V |
Renesas |
5,282 |
|
|
2SD1383KT146B
|
0.3 Amps, 32 Volts, 200mW |
Rohm Semiconductor |
5,894 |
|
