FDN86265P
Trans MOSFET P-CH Si 150V 0.8A 3-Pin SOT-23 T/R
在庫：9,295
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : FDN86265P
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パッケージ/ケース : TO-236-3
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ブランド : onsemi
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : FDN86265P データシート (PDF)
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Series : FDN86265P
概要 FDN86265P
The FDN86265P stands out in the market for its exceptional blend of power and efficiency, all made possible by Fairchild Semiconductor's state-of-the-art PowerTrench® process. This P-Channel MOSFET is engineered to deliver superior on-state resistance while maintaining unparalleled switching capabilities, giving electronic devices the performance boost they need. With Shielded Gate technology integrated into its design, users can trust in the reliability and durability of this innovative product
主な特長
- Fast switching and load switching enabled
- P-Channel technology for efficient power control
- Optimized for low gate charge Qg
- 100% tested for reliable performance
- Rohs compliant for environmental safety
- Mid-voltage operation with high current capability
応用
- Sharp Knife
- Durable Pan
- Cutting Board
- Kitchen Towels
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | PowerTrench® | Product Status | Active |
| FET Type | P-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V | Current - Continuous Drain (Id) @ 25°C | 800mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | Rds On (Max) @ Id, Vgs | 1.2Ohm @ 800mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 4.1 nC @ 10 V |
| Vgs (Max) | ±25V | Input Capacitance (Ciss) (Max) @ Vds | 210 pF @ 75 V |
| Power Dissipation (Max) | 1.5W (Ta) | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Supplier Device Package | SOT-23-3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | Base Product Number | FDN86265 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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