FCA47N60
|
650V SUPER FET MOSFET FCA47N60 |
onsemi |
6,287 |
|
FQA9P25
|
Trans MOSFET P-CH 250V 10.5A 3-Pin(3+Tab) TO-3P Tube |
onsemi |
8,462 |
|
IRFP150A
|
Product description: IRFP150A - N-channel MOSFET with a voltage rating of 100V |
onsemi |
6,938 |
|
IXFQ60N50P3
|
N-channel MOSFET with 500V rating and 60A current capacity in TO3P package |
IXYS |
6,710 |
|
IXGQ240N30PB
|
Transistors - IGBT, POLAR series, 300V 500A, ideal for PDP applications |
IXYS |
6,352 |
|
IXTQ100N25P
|
N-channel MOSFET with 250V voltage rating, 100A current, and TO-3P package |
IXYS |
7,782 |
|
IXTQ130N10T
|
N-channel power MOSFET with a maximum voltage rating of 100V and a continuous drain current of 130A |
IXYS |
5,764 |
|
IXTQ36P15P
|
150V - 36.0 Amps MOSFET with a low on-resistance of 0.110 ohms |
IXYS |
9,796 |
|
IXTQ50N25T
|
High voltage N-channel Transistor |
IXYS |
6,219 |
|
IXTQ480P2
|
N-Channel Power MOSFET, 52 Amperes Drain Current, 500 Volts Drain-to-Source Voltage, 0 |
IXYS |
8,107 |
|
IXTQ75N10P
|
High-Current N-Channel MOSFET Transistor, 100V Voltage Rating, TO-3P Package, Through-Hole Mounting |
IXYS |
9,047 |
|
IXTQ96N15P
|
96 Amps MOSFET with 150V and 0.024 Rds |
IXYS |
8,073 |
|
SBL6040PT
|
40V 60A Schottky Diode with 3-Pin TO-3P configuration |
Diodes Incorporated |
5,415 |
|
SGH80N60UFTU
|
0A 195W N-Channel IGBT Chip |
onsemi |
7,319 |
|
SGH80N60UFDTU
|
This IGBT chip is configured as an N-channel device, supporting up to 600 Volts and a maximum current of 80 Amperes |
onsemi |
5,604 |
|
SSH70N10A
|
Trans MOSFET N-CH 100V 70A 3-Pin(3+Tab) TO-3P Rail |
onsemi |
5,529 |
|
2STC5948
|
Advanced BJT technology for improved reliability and low noise performance |
STMicroelectronics |
7,556 |
|
2STA2120
|
250V, 17A Rating |
STMicroelectronics |
8,525 |
|
2STA1695
|
General-Purpose PNP Bipolar Transistor |
STMicroelectronics |
7,350 |
|
2SK1317-E
|
Ideal for use in switching circuits that require high performance |
Renesas |
9,254 |
|
IXTQ36N50P
|
MOSFET DIS 36A 500V N-CH TO3P POLARHV THT |
IXYS |
5,107 |
|
GT50N322A
|
F IGBT / TRANSISTOR TO-3PN Ic=50A Vces=600V |
Toshiba Semiconductor and Storage |
5,344 |
|
2SK1835-E
|
N-Channel power MOSFET with a 1.5KV voltage rating and 4A current capability |
Renesas Electronics Corporation |
8,497 |
|
SBL1640PT
|
Exclusive to Original Equipment Manufacturers and Contract Manufacturers (No Intermediaries Allowed) |
Diodes Incorporated |
7,756 |
|
2SK1058-E
|
TO-3P N Channel MOSFET Tube |
Renesas |
5,736 |
|
IXTQ44N50P
|
Transistor N-channel power MOSFET rated for 500 volts and 44 amps, with a TO-3P package |
IXYS |
8,923 |
|
2STC5242
|
Trans GP BJT NPN 230V 15A 130000mW 3-Pin(3+Tab) TO-3P Tube |
STMicroelectronics |
9,307 |
|
SBL4045PT
|
Schottky Diode 45V 40A TO-3P Package |
Diodes Incorporated |
5,241 |
|
FGA25N120ANTDTU
|
Trans IGBT Chip N-CH 1200V 50A 312W 3-Pin(3+Tab) TO-3PN Rail |
onsemi |
7,619 |
|
FDA8440
|
Trans MOSFET N-CH 40V 30A 3-Pin(3+Tab) TO-3P Tube |
onsemi |
6,040 |
|
IXTQ52N30P
|
The IXTQ52N30P MOSFET is designed for TO-3P packaging and complies with ROHS regulations, ensuring environmental safety |
Ixys |
5,923 |
|
IXTQ52P10P
|
2A power MOSFET with P-channel design, 100V rating, and TO-3P mount |
IXYS |
5,396 |
|
FJA13009TU
|
Trans GP BJT NPN 400V 12A 130000mW 3-Pin(3+Tab) TO-3P Tube |
onsemi |
5,057 |
|
IXGQ85N33PCD1
|
330V 85A 150W Trans IGBT Chip |
Ixys |
5,718 |
|
SGH40N60UFDTU
|
40 Amp 600 Volt 160 Watt TO-3P Insulated Gate Bipolar Transistor |
onsemi |
7,005 |
|
FGA60N60UFDTU
|
Trans IGBT Chip N-CH 600V 120A 298W 3-Pin(3+Tab) TO-3P Tube |
onsemi |
7,230 |
|
FGA20N120FTDTU
|
Trans IGBT Chip N-CH 1200V 40A 298W 3-Pin(3+Tab) TO-3P Tube |
onsemi |
9,648 |
|
SBL2040PT
|
Schottky Rectifier Diode, 20A, 40V V(RRM), Silicon, 1 Phase, 2 Element, ROHS COMPLIANT, Plastic TO-3P, 3 PIN |
Diodes Incorporated |
5,792 |
|
SBL4040PT
|
Schottky Rectifier Diode, 1 Phase, 2 Element, 40A, 40V V(RRM), Silicon, Plastic |
Diodes Incorporated |
9,622 |
|
SBL3060PT
|
Schottky Rectifier Diode SBL3060PT: 1-Phase |
Diodes Incorporated |
5,693 |
|
SFH9154
|
SFH9154 is a power MOSFET with P-channel configuration |
onsemi |
5,664 |
|
SBR60A300PT
|
High-Power Rectifier Diode: 300V, 60A, 50ns Switching, TO-247AB Package |
Diodes Incorporated |
7,082 |
|
NTE2300
|
NTE2300 Bipolar NPN Transistor - 800V, 5A, 3MHz, 120W, Through Hole TO-3P |
NTE Electronics, Inc |
6,979 |
|
NTE2973
|
Power Field-Effect Transistor, N-Channel, 14A I(D), 900V, 0.85ohm |
NTE Electronics, Inc |
5,585 |
|
NTE6090
|
NTE6090: A Schottky Rectifier Diode designed for 30A current and with a voltage rating of 45V |
NTE Electronics, Inc |
7,417 |
|
NTE2311
|
450V, 15A NPN bipolar transistor with 115W power dissipation in TO3P casing |
NTE Electronics, Inc |
5,885 |
|
NTE2539
|
Transistor General Purpose Bipolar Junction NPN 400V 25A TO-247 Package |
NTE Electronics, Inc |
6,186 |
|
NTE2393
|
500V 10A MOSFET with 670mΩ@5A |
NTE Electronics, Inc |
9,849 |
|
NTE2354
|
ROHS Compliant NTE2354 Transistor |
NTE Electronics, Inc |
5,404 |
|
NTE2302
|
3-Pin NTE2302 Transistor |
NTE Electronics, Inc |
8,444 |
|